onsemi Memory CAT28C64BN12

Description
EEPROM Memory IC 64Kbit 120 ns 32-PLCC (13.97x11.43)
  • Memory - CAT28C64BN12 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Description
EEPROM Memory IC 64Kbit 120 ns 32-PLCC (13.97x11.43)

Suppliers

Company
Product
Description
Supplier Links
Memory - CAT28C64BN12 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
CAT28C64BN12
Memory CAT28C64BN12
EEPROM Memory IC 64Kbit 120 ns 32-PLCC (13.97x11.43)

EEPROM Memory IC 64Kbit 120 ns 32-PLCC (13.97x11.43)

Buy Now

Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number CAT28C64BN12
Product Name Memory
Memory Category EEPROM; EEPROM
Access Time 120 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - EPROM - HPA01220DBZR - 920578-HPA01220DBZR - Win Source Electronics
Texas Instruments
Memory - EPROM - HPA01220DBZR
HPA01220DBZR
Specs
Memory Category EPROM
View Details
4 suppliers
Memory - AS29F010 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS29F010
Specs
Memory Category FLASH
Access Time 60 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
SDRAM - 2420768P - RS Components, Ltd.
RS Components, Ltd.
SDRAM
2420768P
Specs
Memory Category DRAM Chip
Access Time 20 ns
Operating Temperature -40 C (-40 F)
View Details
Memory - 51-02471V01-A - Lingto Electronic Limited
Infineon Technologies AG
Memory
51-02471V01-A
View Details
2 suppliers