onsemi Memory CAT28C64BH1312

Description
EEPROM Memory IC 64Kbit Parallel 120 ns 28-TSOP
Datasheet
Description
EEPROM Memory IC 64Kbit Parallel 120 ns 28-TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CAT28C64BH1312 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 64Kbit Parallel 120 ns 28-TSOP

EEPROM Memory IC 64Kbit Parallel 120 ns 28-TSOP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - CAT28C64BH1312 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
CAT28C64BH1312
Integrated Circuits (ICs) - Memory - Memory CAT28C64BH1312
IC EEPROM 64KBIT PARALLEL 28TSOP

IC EEPROM 64KBIT PARALLEL 28TSOP

Supplier's Site
IC EEPROM 64KBIT PARALLEL 28TSOP

IC EEPROM 64KBIT PARALLEL 28TSOP

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number CAT28C64BH1312 CAT28C64BH1312 CAT28C64BH1312
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category EEPROM; EEPROM EEPROM; Non-Volatile EEPROM; EEPROM
Access Time 120 ns 120 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 64 kbits 64 kbits 64 kbits
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