onsemi Memory CAT28C512G12

Description
EEPROM Memory IC 512Kbit Parallel 120 ns 32-PLCC (11.43x13.97)
  • Memory - CAT28C512G12 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - CAT28C512G12 - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
EEPROM Memory IC 512Kbit Parallel 120 ns 32-PLCC (11.43x13.97)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CAT28C512G12 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
CAT28C512G12
Memory CAT28C512G12
EEPROM Memory IC 512Kbit Parallel 120 ns 32-PLCC (11.43x13.97)

EEPROM Memory IC 512Kbit Parallel 120 ns 32-PLCC (11.43x13.97)

Buy Now Datasheet
Memory - CAT28C512G12 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
CAT28C512G12
Memory CAT28C512G12
IC EEPROM 512KBIT PAR 32PLCC

IC EEPROM 512KBIT PAR 32PLCC

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number CAT28C512G12 CAT28C512G12
Product Name Memory Memory
Memory Category EEPROM; EEPROM EEPROM; EEPROM
Access Time 120 ns 120 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420773 - RS Components, Ltd.
RS Components, Ltd.
SDRAM
2420773
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details
Memory - NMC27C32BQ-200 - 258514-NMC27C32BQ-200 - Win Source Electronics
Texas Instruments
Memory - NMC27C32BQ-200
NMC27C32BQ-200
View Details
Memory - 7164L25DB - Lingto Electronic Limited
Rochester Electronics
Memory
7164L25DB
Specs
Memory Category SRAM; SRAM Chip
Access Time 25 ns
Density 64 kbits
View Details
Memory - AS4SD32M16 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS4SD32M16
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 256000 kbits
View Details