onsemi Memory CAT28C512G12

Description
EEPROM Memory IC 512Kbit Parallel 120 ns 32-PLCC (11.43x13.97)
  • Memory - CAT28C512G12 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - CAT28C512G12 - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
EEPROM Memory IC 512Kbit Parallel 120 ns 32-PLCC (11.43x13.97)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CAT28C512G12 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
CAT28C512G12
Memory CAT28C512G12
EEPROM Memory IC 512Kbit Parallel 120 ns 32-PLCC (11.43x13.97)

EEPROM Memory IC 512Kbit Parallel 120 ns 32-PLCC (11.43x13.97)

Buy Now Datasheet
Memory - CAT28C512G12 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
CAT28C512G12
Memory CAT28C512G12
IC EEPROM 512KBIT PAR 32PLCC

IC EEPROM 512KBIT PAR 32PLCC

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number CAT28C512G12 CAT28C512G12
Product Name Memory Memory
Memory Category EEPROM; EEPROM EEPROM; EEPROM
Access Time 120 ns 120 ns
Operating Temperature 0 to 70 C (32 to 158 F)
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