onsemi Memory CAT28C257N-12T

Description
Memory IC
Datasheet
Description
Memory IC
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CAT28C257N-12T - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory IC

Memory IC

Buy Now Datasheet
Memory - CAT28C257N-12T - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 256Kbit 120 ns 32-PLCC (13.97x11.43)

EEPROM Memory IC 256Kbit 120 ns 32-PLCC (13.97x11.43)

Buy Now

Technical Specifications

  Quarktwin Technology Ltd. Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number CAT28C257N-12T CAT28C257N-12T
Product Name Memory Memory
Memory Category EEPROM; EEPROM
Access Time 120 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AT24C04B-TSU-T - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 550 ns
Density 4 kbits
View Details
Memory - MYXxxSMS04GP32PB1-45/x - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 27C512AE200/883C - Quarktwin Technology Ltd.
Specs
Memory Category EPROM; EPROM
Access Time 200 ns
Operating Temperature -40 to 125 C (-40 to 257 F)
View Details
2 suppliers
Flash Memory - 1882679P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 128000 kbits
Package Type WSON
View Details