onsemi Memory CAT28C257N-12T

Description
Memory IC
Datasheet
Description
Memory IC
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CAT28C257N-12T - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory IC

Memory IC

Buy Now Datasheet
Memory - CAT28C257N-12T - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 256Kbit 120 ns 32-PLCC (13.97x11.43)

EEPROM Memory IC 256Kbit 120 ns 32-PLCC (13.97x11.43)

Buy Now

Technical Specifications

  Quarktwin Technology Ltd. Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number CAT28C257N-12T CAT28C257N-12T
Product Name Memory Memory
Memory Category EEPROM; EEPROM
Access Time 120 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

 - LP3913SQ-AU/NOPB - Rochester Electronics
Texas Instruments
Specs
Memory Category Flash
Package Type HVQFN48
View Details
SDRAM - 2420772 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details
Memory - MYXxxSMS01GP32xxx-45/x - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 8 909 002 174 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers