onsemi Memory CAT28C257N-12

Description
EEPROM Memory IC 256Kbit 120 ns 32-PLCC (13.97x11.43)
Datasheet
Description
EEPROM Memory IC 256Kbit 120 ns 32-PLCC (13.97x11.43)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CAT28C257N-12 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 256Kbit 120 ns 32-PLCC (13.97x11.43)

EEPROM Memory IC 256Kbit 120 ns 32-PLCC (13.97x11.43)

Buy Now
Memory - CAT28C257N-12 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory IC

Memory IC

Buy Now Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number CAT28C257N-12 CAT28C257N-12
Product Name Memory Memory
Memory Category EEPROM; EEPROM
Access Time 120 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 29110BJA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 70 ns
Density 16 kbits
View Details
Memory - 40060397 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - AS8FLC2M32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details