onsemi Memory CAT28C16AXI90

Description
EEPROM Memory IC 16Kb (2K x 8) Parallel 90ns 24-SOIC
Request a Quote Datasheet
Description
EEPROM Memory IC 16Kb (2K x 8) Parallel 90ns 24-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CAT28C16AXI90-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 16Kb (2K x 8) Parallel 90ns 24-SOIC

EEPROM Memory IC 16Kb (2K x 8) Parallel 90ns 24-SOIC

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - CAT28C16AXI90 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
CAT28C16AXI90
Integrated Circuits (ICs) - Memory - Memory CAT28C16AXI90
IC EEPROM 16KBIT PARALLEL 24SOIC

IC EEPROM 16KBIT PARALLEL 24SOIC

Supplier's Site
IC EEPROM 16KBIT PARALLEL 24SOIC

IC EEPROM 16KBIT PARALLEL 24SOIC

Supplier's Site Datasheet
Memory - CAT28C16AXI90 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 16Kbit Parallel 90 ns 24-SOIC

EEPROM Memory IC 16Kbit Parallel 90 ns 24-SOIC

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number CAT28C16AXI90-ND CAT28C16AXI90 CAT28C16AXI90 CAT28C16AXI90
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category EEPROM EEPROM; Non-Volatile EEPROM; EEPROM EEPROM; EEPROM
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type SOIC; "24-SOIC (0.295"", 7.50mm Width)" SOIC; 24-SOIC (0.295\", 7.50mm Width)
Supply Voltage 4.5V ~ 5.5V Surface Mount 4.5V ~ 5.5V
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 24C02/P - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 2 kbits
View Details
Memory - AS4C1259 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 100 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
 - LP3913SQ-AD/NOPB - Rochester Electronics
Texas Instruments
Specs
Memory Category Flash
Package Type HVQFN48
View Details
Memory - 40060530 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers