onsemi Memory CAT28C16AW12

Description
IC EEPROM 16KBIT PARALLEL 24SOIC
  • Memory - CAT28C16AW12 - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - CAT28C16AW12 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
IC EEPROM 16KBIT PARALLEL 24SOIC
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CAT28C16AW12 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
CAT28C16AW12
Memory CAT28C16AW12
IC EEPROM 16KBIT PARALLEL 24SOIC

IC EEPROM 16KBIT PARALLEL 24SOIC

Supplier's Site Datasheet
Memory - CAT28C16AW12 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
CAT28C16AW12
Memory CAT28C16AW12
EEPROM Memory IC 16Kbit Parallel 120 ns 24-SOIC

EEPROM Memory IC 16Kbit Parallel 120 ns 24-SOIC

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number CAT28C16AW12 CAT28C16AW12
Product Name Memory Memory
Memory Category EEPROM; EEPROM EEPROM; EEPROM
Access Time 120 ns 120 ns
Density 16 kbits 16 kbits
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420767 - RS Components, Ltd.
RS Components, Ltd.
SDRAM
2420767
Specs
Memory Category DRAM Chip
Access Time 20 ns
Operating Temperature -40 C (-40 F)
View Details
Memory - AT28C010-20LM/883 - Lingto Electronic Limited
Rochester Electronics
Memory
AT28C010-20LM/883
Specs
Memory Category EEPROM; EEPROM
Access Time 200 ns
Density 1000 kbits
View Details
Memory - A2C00063405 A - Lingto Electronic Limited
Infineon Technologies AG
Memory
A2C00063405 A
View Details
2 suppliers
Memory - MYX4DD3K512M64PBG2 - Micross Components, Inc.
Micross Components, Inc.
Memory
MYX4DD3K512M64PBG2
Specs
Memory Category DDR3
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 4096000 kbits
View Details