onsemi Memory CAT25M01YE-G

Description
EEPROM Memory IC 1Mbit SPI 10 MHz 8-TSSOP
  • Memory - CAT25M01YE-G - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - CAT25M01YE-G - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
EEPROM Memory IC 1Mbit SPI 10 MHz 8-TSSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CAT25M01YE-G - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
CAT25M01YE-G
Memory CAT25M01YE-G
EEPROM Memory IC 1Mbit SPI 10 MHz 8-TSSOP

EEPROM Memory IC 1Mbit SPI 10 MHz 8-TSSOP

Buy Now
Memory - CAT25M01YE-G - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
CAT25M01YE-G
Memory CAT25M01YE-G
IC EEPROM 1MBIT SPI 8TSSOP

IC EEPROM 1MBIT SPI 8TSSOP

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number CAT25M01YE-G CAT25M01YE-G
Product Name Memory Memory
Memory Category EEPROM; EEPROM EEPROM; EEPROM
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 1882578 - RS Components, Ltd.
RS Components, Ltd.
SDRAM
1882578
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details
Memory - 5962-8852503ZA - Lingto Electronic Limited
Rochester Electronics
Memory
5962-8852503ZA
Specs
Memory Category EEPROM; EEPROM
Access Time 250 ns
Density 256 kbits
View Details
Memory - 580970-002-00 - Lingto Electronic Limited
Infineon Technologies AG
Memory
580970-002-00
View Details
2 suppliers
Memory - SMJ44400 - Micross Components, Inc.
Micross Components, Inc.
Memory
SMJ44400
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details