onsemi Memory CAT25M01VE-G

Description
EEPROM Memory IC 1Mbit SPI 10 MHz 8-SOIC
  • Memory - CAT25M01VE-G - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - CAT25M01VE-G - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
EEPROM Memory IC 1Mbit SPI 10 MHz 8-SOIC
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CAT25M01VE-G - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
CAT25M01VE-G
Memory CAT25M01VE-G
EEPROM Memory IC 1Mbit SPI 10 MHz 8-SOIC

EEPROM Memory IC 1Mbit SPI 10 MHz 8-SOIC

Buy Now
Memory - CAT25M01VE-G - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
CAT25M01VE-G
Memory CAT25M01VE-G
IC EEPROM 1MBIT SPI 8SOIC

IC EEPROM 1MBIT SPI 8SOIC

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number CAT25M01VE-G CAT25M01VE-G
Product Name Memory Memory
Memory Category EEPROM; EEPROM EEPROM; EEPROM
Unlock Full Specs
to access all available technical data

Similar Products

Memory - CAT24C03YI-GT3 - Lingto Electronic Limited
Rochester Electronics
Memory
CAT24C03YI-GT3
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 2 kbits
View Details
Memory - 0607-000023 - Lingto Electronic Limited
Infineon Technologies AG
Memory
0607-000023
View Details
Flash Memory - 1882723 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882723
Specs
Memory Category Flash
Number of Words 256 k
Bits per Word 8 bits
View Details
Memory - AS28C010 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS28C010
Specs
Memory Category EEPROM; EEPROM
Access Time 120 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details