onsemi Memory CAT25M01VE-G

Description
IC EEPROM 1MBIT SPI 8SOIC
  • Memory - CAT25M01VE-G - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - CAT25M01VE-G - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
IC EEPROM 1MBIT SPI 8SOIC
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CAT25M01VE-G - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
CAT25M01VE-G
Memory CAT25M01VE-G
IC EEPROM 1MBIT SPI 8SOIC

IC EEPROM 1MBIT SPI 8SOIC

Supplier's Site Datasheet
Memory - CAT25M01VE-G - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
CAT25M01VE-G
Memory CAT25M01VE-G
EEPROM Memory IC 1Mbit SPI 10 MHz 8-SOIC

EEPROM Memory IC 1Mbit SPI 10 MHz 8-SOIC

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number CAT25M01VE-G CAT25M01VE-G
Product Name Memory Memory
Memory Category EEPROM; EEPROM EEPROM; EEPROM
Unlock Full Specs
to access all available technical data

Similar Products

- 27S19ADM/B - Rochester Electronics
Rochester Electronics
Integrated Circuits (ICs) - Memory - Memory
27S19ADM/B
Specs
Memory Category PROM
Density 0 kbits
Package Type DIP; CDIP16
View Details
4 suppliers
Memory - AS8E128K32 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS8E128K32
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 28225511 A - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
28225511 A
View Details
Memory - 54F189DLQB - Quarktwin Technology Ltd.
Texas Instruments
Memory
54F189DLQB
Specs
Memory Category RAM
Access Time 32 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
2 suppliers