onsemi 10MHZ Memory IC and Storage Component CAT25C08Y-TE13

Description
EEPROM, 1KX8, Serial, CMOS, PDSO8
Request a Quote Datasheet
Description
EEPROM, 1KX8, Serial, CMOS, PDSO8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - CAT25C08Y-TE13 - Rochester Electronics
Newburyport, MA, United States
EEPROM, 1KX8, Serial, CMOS, PDSO8

EEPROM, 1KX8, Serial, CMOS, PDSO8

Supplier's Site Datasheet
10MHZ Memory IC and Storage Component - 774-CAT25C08Y-TE13 - ERSAELECTRONICS PTE. LTD.
Singapore
10MHZ Memory IC and Storage Component
774-CAT25C08Y-TE13
10MHZ Memory IC and Storage Component 774-CAT25C08Y-TE13
IC EEPROM 8KBIT SPI 10MHZ 8TSSOP Product overview: CAT25C08Y-TE13 from onsemi is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10MHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 10MHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-CAT25C08Y-TE13 can be used for catalog matching and distributor lookup.

IC EEPROM 8KBIT SPI 10MHZ 8TSSOP Product overview: CAT25C08Y-TE13 from onsemi is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10MHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 10MHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-CAT25C08Y-TE13 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
CAT25C08Y-TE13
Integrated Circuits (ICs) - Memory - Memory CAT25C08Y-TE13
IC EEPROM 8KBIT SPI 10MHZ 8TSSOP

IC EEPROM 8KBIT SPI 10MHZ 8TSSOP

Supplier's Site
Memory - CAT25C08Y-TE13 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 8Kbit SPI 10 MHz 8-TSSOP

EEPROM Memory IC 8Kbit SPI 10 MHz 8-TSSOP

Buy Now Datasheet
Memory - CAT25C08Y-TE13 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 8Kbit SPI 10 MHz 40 ns 8-TSSOP

EEPROM Memory IC 8Kbit SPI 10 MHz 40 ns 8-TSSOP

Buy Now

Technical Specifications

  Rochester Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number CAT25C08Y-TE13 774-CAT25C08Y-TE13 CAT25C08Y-TE13 CAT25C08Y-TE13 CAT25C08Y-TE13
Product Name 10MHZ Memory IC and Storage Component Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category EEPROM EEPROM; Non-Volatile EEPROM; Non-Volatile EEPROM; EEPROM EEPROM; EEPROM
Logic Family CMOS
Package Type SOP; SSOP; TSSOP; TSSOP8 TSSOP; Bulk SSOP; TSSOP SSOP; TSSOP; 8-TSSOP (0.173\", 4.40mm Width) SSOP; TSSOP; 8-TSSOP (0.173\", 4.40mm Width)
Access Time 40 ns 40 ns
Cycle Time 5.00E6 ns 5.00E6 ns
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AT93C46D-TP25-B - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Density 1 kbits
View Details
SDRAM - 2420769 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details
Memory - SMJ626162 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Access Time 12 ns
Operating Temperature -65 to 150 C (-85 to 302 F)
View Details