onsemi Integrated Circuits (ICs) - Memory - Memory CAT25160VI-GC

Description
IC EEPROM 16KBIT SPI 10MHZ 8SOIC
  • Integrated Circuits (ICs) - Memory - Memory - CAT25160VI-GC - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Memory - CAT25160VI-GC - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - CAT25160VI-GC - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
IC EEPROM 16KBIT SPI 10MHZ 8SOIC
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - CAT25160VI-GC - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
CAT25160VI-GC
Integrated Circuits (ICs) - Memory - Memory CAT25160VI-GC
IC EEPROM 16KBIT SPI 10MHZ 8SOIC

IC EEPROM 16KBIT SPI 10MHZ 8SOIC

Supplier's Site
Memory - CAT25160VI-GC - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
CAT25160VI-GC
Memory CAT25160VI-GC
IC EEPROM 16KB SER SPI 8SOIC

IC EEPROM 16KB SER SPI 8SOIC

Supplier's Site Datasheet
Memory - CAT25160VI-GC - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
CAT25160VI-GC
Memory CAT25160VI-GC
EEPROM Memory IC 16Kbit SPI 10 MHz 8-SOIC

EEPROM Memory IC 16Kbit SPI 10 MHz 8-SOIC

Buy Now

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number CAT25160VI-GC CAT25160VI-GC CAT25160VI-GC
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category EEPROM; Non-Volatile EEPROM; EEPROM EEPROM; EEPROM
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AT34C02B-10TU-1.7 - Lingto Electronic Limited
Rochester Electronics
Memory
AT34C02B-10TU-1.7
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 2 kbits
View Details
Memory - 28028557 A - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
28028557 A
View Details
2 suppliers
Memory - AS4C1024 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS4C1024
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
SN74ACT2229 256 x 1 x 2 dual independent synchronous FIFO memories - SN74ACT2229DWR - Texas Instruments
Texas Instruments
SN74ACT2229 256 x 1 x 2 dual independent synchronous FIFO memories
SN74ACT2229DWR
Specs
Memory Category FIFO
Package Type SOIC
View Details
5 suppliers