onsemi Memory CAT25128VP2IGT3D

Description
IC EEPROM 128KB SERIAL SPI 8TDFN
  • Memory - CAT25128VP2IGT3D - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - CAT25128VP2IGT3D - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
IC EEPROM 128KB SERIAL SPI 8TDFN
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CAT25128VP2IGT3D - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
CAT25128VP2IGT3D
Memory CAT25128VP2IGT3D
IC EEPROM 128KB SERIAL SPI 8TDFN

IC EEPROM 128KB SERIAL SPI 8TDFN

Supplier's Site Datasheet
Memory - CAT25128VP2IGT3D - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
CAT25128VP2IGT3D
Memory CAT25128VP2IGT3D
EEPROM Memory IC 128Kbit SPI 10 MHz 8-TDFN (2x3)

EEPROM Memory IC 128Kbit SPI 10 MHz 8-TDFN (2x3)

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number CAT25128VP2IGT3D CAT25128VP2IGT3D
Product Name Memory Memory
Memory Category EEPROM; EEPROM EEPROM; EEPROM
Unlock Full Specs
to access all available technical data

Similar Products

TEXAS INSTRUMENTS CC2510F16RSP IC, TRX, 2.4GHZ, 16K FLASH, QFN36 - 815-CC2510F16RSP - Utmel Electronic Limited
Texas Instruments
TEXAS INSTRUMENTS CC2510F16RSP IC, TRX, 2.4GHZ, 16K FLASH, QFN36
CC2510F16RSP
Specs
Memory Category Flash
Logic Family CMOS
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
Memory - CAT24C16YGI - Lingto Electronic Limited
Rochester Electronics
Memory
CAT24C16YGI
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 16 kbits
View Details
Memory - 9023260 - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
9023260
View Details
Flash Memory - 1882568 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882568
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details