onsemi Integrated Circuits (ICs) - Memory - Memory CAT25010VE-GT3

Description
EEPROM, 128X8, Serial, CMOS, PDSO8
Request a Quote Datasheet
Description
EEPROM, 128X8, Serial, CMOS, PDSO8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - CAT25010VE-GT3 - Rochester Electronics
Newburyport, MA, United States
EEPROM, 128X8, Serial, CMOS, PDSO8

EEPROM, 128X8, Serial, CMOS, PDSO8

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - CAT25010VE-GT3 - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
CAT25010VE-GT3
Integrated Circuits (ICs) - Memory - Memory CAT25010VE-GT3
IC EEPROM 1KBIT SPI 10MHZ 8SOIC

IC EEPROM 1KBIT SPI 10MHZ 8SOIC

Supplier's Site
Memory - CAT25010VE-GT3 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 1Kbit SPI 8-SOIC

EEPROM Memory IC 1Kbit SPI 8-SOIC

Buy Now Datasheet

Technical Specifications

  Rochester Electronics Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number CAT25010VE-GT3 CAT25010VE-GT3 CAT25010VE-GT3
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category EEPROM EEPROM; Non-Volatile EEPROM; EEPROM
Logic Family CMOS
Package Type SOP; SOP8 SOIC; 8-SOIC (0.154\", 3.90mm Width)
Cycle Time 5.00E6 ns
Unlock Full Specs
to access all available technical data

Similar Products

 - LP3913SQ-AD/NOPB - Rochester Electronics
Texas Instruments
Specs
Memory Category Flash
Package Type HVQFN48
View Details
Flash Memory - 1882682 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - AS28C010 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 120 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 7GA6Y0046 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers