onsemi Memory CAT25010VE-G

Description
EEPROM Memory IC 1Kbit SPI 8-SOIC
  • Memory - CAT25010VE-G - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
EEPROM Memory IC 1Kbit SPI 8-SOIC
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CAT25010VE-G - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
CAT25010VE-G
Memory CAT25010VE-G
EEPROM Memory IC 1Kbit SPI 8-SOIC

EEPROM Memory IC 1Kbit SPI 8-SOIC

Buy Now Datasheet

Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number CAT25010VE-G
Product Name Memory
Memory Category EEPROM; EEPROM
Unlock Full Specs
to access all available technical data

Similar Products

Controllers - BQ2201SNG4 - Quarktwin Technology Ltd.
Texas Instruments
Controllers
BQ2201SNG4
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type SOIC; 8-SOIC (0.154\", 3.90mm Width)
Supply Voltage 4.5V ~ 5.5V
View Details
3 suppliers
Memory - AT25256B-SSHL-B - Lingto Electronic Limited
Rochester Electronics
Memory
AT25256B-SSHL-B
Specs
Memory Category EEPROM; EEPROM
Density 256 kbits
View Details
Memory - 28298080 A - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
28298080 A
View Details
2 suppliers
Memory - AS5C4009 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS5C4009
Specs
Memory Category SRAM; SRAM Chip
Access Time 55 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details