onsemi Memory CAT25010VE-G

Description
EEPROM Memory IC 1Kbit SPI 8-SOIC
Datasheet
Description
EEPROM Memory IC 1Kbit SPI 8-SOIC
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CAT25010VE-G - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 1Kbit SPI 8-SOIC

EEPROM Memory IC 1Kbit SPI 8-SOIC

Buy Now Datasheet

Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number CAT25010VE-G
Product Name Memory
Memory Category EEPROM; EEPROM
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 16-1004144-01 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
SDRAM - 2420770P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details
Memory - AT25128-10PC-2.7 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Density 128 kbits
View Details
Logic - Logic - FIFOs Memory - 74S225N - 053814-74S225N - Win Source Electronics
Specs
Memory Category FIFO
Data Rate 10 MHz
Operating Temperature 0 to 70 C (32 to 158 F)
View Details