onsemi Memory CAT24C16WE-GT3

Description
IC EEPROM 16KBIT I2C 8SOIC
Request a Quote Datasheet
Description
IC EEPROM 16KBIT I2C 8SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC EEPROM 16KBIT I2C 8SOIC

IC EEPROM 16KBIT I2C 8SOIC

Supplier's Site
Memory - CAT24C16WE-GT3 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 16Kbit I²C 400 kHz 900 ns 8-SOIC

EEPROM Memory IC 16Kbit I²C 400 kHz 900 ns 8-SOIC

Buy Now
IC EEPROM 16KBIT I2C 8SOIC

IC EEPROM 16KBIT I2C 8SOIC

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - CAT24C16WE-GT3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
CAT24C16WE-GT3
Integrated Circuits (ICs) - Memory - Memory CAT24C16WE-GT3
IC EEPROM 16KBIT I2C 8SOIC

IC EEPROM 16KBIT I2C 8SOIC

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number CAT24C16WE-GT3 CAT24C16WE-GT3 CAT24C16WE-GT3 CAT24C16WE-GT3
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category EEPROM; EEPROM EEPROM; EEPROM EEPROM; EEPROM EEPROM; Non-Volatile
Data Rate 0 MHz
Access Time 900 ns 900 ns 900 ns
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 1882676 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details
Memory - 71016S20Y - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 1000 kbits
View Details