onsemi Integrated Circuits (ICs) - Memory - Memory CAT24C04WE-G

Description
EEPROM, 512X8, Serial, CMOS, PDSO8
Request a Quote Datasheet
Description
EEPROM, 512X8, Serial, CMOS, PDSO8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - CAT24C04WE-G - Rochester Electronics
Newburyport, MA, United States
EEPROM, 512X8, Serial, CMOS, PDSO8

EEPROM, 512X8, Serial, CMOS, PDSO8

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - CAT24C04WE-G - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
CAT24C04WE-G
Integrated Circuits (ICs) - Memory - Memory CAT24C04WE-G
CAT24C04 - 4-KBIT I2C SERIAL EEP

CAT24C04 - 4-KBIT I2C SERIAL EEP

Supplier's Site
Memory - CAT24C04WE-G - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory IC

Memory IC

Buy Now Datasheet

Technical Specifications

  Rochester Electronics Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number CAT24C04WE-G CAT24C04WE-G CAT24C04WE-G
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category EEPROM
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420772 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details
Memory - 28055481 B - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - MT4C1004J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 3500 ns
Density 1 kbits
View Details