onsemi Single Bipolar Transistors BUV21G

Description
Bipolar (BJT) Transistor NPN 200V 40A 8MHz 250W Through Hole TO-204 (TO-3)
  • Single Bipolar Transistors - BUV21GOS-NDOS-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - BUV21G - 770692-BUV21G - Win Source Electronics
    Win Source Electronics
  • Transistor, Bipol, Npn, 200V, To-3-2; Transistor Polarity Onsemi - 82Y6213 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BUV21G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 200V 40A 8MHz 250W Through Hole TO-204 (TO-3)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BUV21GOS-NDOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BUV21GOS-NDOS-ND
Single Bipolar Transistors BUV21GOS-NDOS-ND
Bipolar (BJT) Transistor NPN 200V 40A 8MHz 250W Through Hole TO-204 (TO-3)

Bipolar (BJT) Transistor NPN 200V 40A 8MHz 250W Through Hole TO-204 (TO-3)

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BUV21G - 770692-BUV21G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BUV21G
770692-BUV21G
TRANSISTORS - Transistors (BJT) - Single - BUV21G 770692-BUV21G
Manufacturer: ON Semiconductor Win Source Part Number: 770692-BUV21G Series: SWITCHMODE Packaging: Tray Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 200°C (TJ) Package: TO-204AE Power - Max: 250W Transistor Type: NPN Frequency - Transition: 8MHz Family Name: BUV21 Categories: Discrete Semiconductor Products Manufacturer Package: TO-3 Current - Collector (Ic) (Maximum): 40A Voltage - Collector Emitter Breakdown (Maximum): 200V Vce Saturation (Maximum) @ Ib, Ic: 1.5V @ 3A, 25A Current - Collector Cutoff (Maximum): 3mA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 20 @ 12A, 2V Alternative Parts (Cross-Reference): BUX21; BUV21; 2N6322; Introduction Date: August 31, 1995 ECCN: EAR99 Estimated EOL Date: 2024 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 770692-BUV21G
Series: SWITCHMODE
Packaging: Tray
Mounting Style: Through Hole
Operating Temperature Range: -65°C ~ 200°C (TJ)
Package: TO-204AE
Power - Max: 250W
Transistor Type: NPN
Frequency - Transition: 8MHz
Family Name: BUV21
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-3
Current - Collector (Ic) (Maximum): 40A
Voltage - Collector Emitter Breakdown (Maximum): 200V
Vce Saturation (Maximum) @ Ib, Ic: 1.5V @ 3A, 25A
Current - Collector Cutoff (Maximum): 3mA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 20 @ 12A, 2V
Alternative Parts (Cross-Reference): BUX21; BUV21; 2N6322;
Introduction Date: August 31, 1995
ECCN: EAR99
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Transistor, Bipol, Npn, 200V, To-3-2; Transistor Polarity Onsemi - 82Y6213 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipol, Npn, 200V, To-3-2; Transistor Polarity Onsemi
82Y6213
Transistor, Bipol, Npn, 200V, To-3-2; Transistor Polarity Onsemi 82Y6213
TRANSISTOR, BIPOL, NPN, 200V, TO-3-2; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:200V; Transition Frequency ft:8MHz; Power Dissipation Pd:250W; DC Collector Current:40A; DC Current Gain hFE:10hFE; Transistor Case RoHS Compliant: Yes

TRANSISTOR, BIPOL, NPN, 200V, TO-3-2; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:200V; Transition Frequency ft:8MHz; Power Dissipation Pd:250W; DC Collector Current:40A; DC Current Gain hFE:10hFE; Transistor Case RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BUV21G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BUV21G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BUV21G
TRANS NPN 200V 40A TO204

TRANS NPN 200V 40A TO204

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BUV21G
Bipolar Transistors - BJT BUV21G
Bipolar Transistors - BJT 40A 200V 250W NPN

Bipolar Transistors - BJT 40A 200V 250W NPN

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BUV21GOS-NDOS-ND 770692-BUV21G 82Y6213 BUV21G BUV21G
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BUV21G Transistor, Bipol, Npn, 200V, To-3-2; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity NPN NPN NPN
Package Type TO-204AE TO-3; SOT3 TO-3
Packing Method Tray; Tray Tray
IC(max) 3 milliamps 40000 milliamps
Power Gain 20 dB
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