onsemi Single Bipolar Transistors BU807TU

Description
Bipolar (BJT) Transistor NPN - Darlington 150V 8A 60W Through Hole TO-220-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN - Darlington 150V 8A 60W Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BU807TU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BU807TU-ND
Single Bipolar Transistors BU807TU-ND
Bipolar (BJT) Transistor NPN - Darlington 150V 8A 60W Through Hole TO-220-3

Bipolar (BJT) Transistor NPN - Darlington 150V 8A 60W Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors - 1381638-BU807TU - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
1381638-BU807TU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors 1381638-BU807TU
Win Source Part Number: 1381638-BU807TU Category: Discrete Semiconductor Products>Transistors >Bipolar (BJT)>Single Bipolar Transistors Package: Tube Power - Max: 60 W Voltage - Collector Emitter Breakdown (Max): 150 V Current - Collector (Ic) (Max): 8 A Transistor Type: NPN - Darlington Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 5A Current - Collector Cutoff (Max): 100µA Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3 Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 66 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: ON Semiconductor Base Product Number: BU807 Product Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited) Standard Package: 1,000 pcs

Win Source Part Number: 1381638-BU807TU
Category: Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Single Bipolar Transistors
Package: Tube
Power - Max: 60 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 8 A
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 5A
Current - Collector Cutoff (Max): 100µA
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: ON Semiconductor
Base Product Number: BU807
Product Status: Obsolete
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Standard Package: 1,000 pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BU807TU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BU807TU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BU807TU
TRANS NPN DARL 150V 8A TO220-3

TRANS NPN DARL 150V 8A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BU807TU-ND 1381638-BU807TU BU807TU
Product Name Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type TO-220; TO-220-3 TO-220; SOT3
IC(max) 8000 milliamps 8000 milliamps
Output Power 60 watts
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