onsemi Single Bipolar Transistors BU407G

The BU407G is a Pb-free NPN silicon power transistor in a TO-220AB package, rated for a collector-emitter voltage of 150 Vdc and a continuous collector current of 7 Adc, with a peak repetitive collector current of 10 Adc and a total device dissipation of 60 W at 25 °C. It is designed for high-voltage, high-speed switching applications such as horizontal deflection output stages in CRT televisions. Thermal resistance from junction to case is 2.08 °C/W, and junction temperature ranges from -65 °C to 150 °C. The device meets RoHS compliance standards and is packaged in a rail of 50 units.