onsemi TRANSISTORS - Transistors (BJT) - Single - BU323ZG BU323ZG

Manufacturer: ON Semiconductor
Win Source Part Number: 770616-BU323ZG
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -65°C ~ 175°C (TJ)
Package: TO-247-3
Power - Max: 150W
Transistor Type: NPN - Darlington
Frequency - Transition: 2MHz
Family Name: BU323Z
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-247
Current - Collector (Ic) (Maximum): 10A
Voltage - Collector Emitter Breakdown (Maximum): 350V
Vce Saturation (Maximum) @ Ib, Ic: 1.7V @ 250mA, 10A
Current - Collector Cutoff (Maximum): 100μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 500 @ 5A, 4.6V
Alternative Parts (Cross-Reference): TIP162; BU921PFI; TIP161;
Introduction Date: September 22, 1998
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited

Bipolar (BJT) Transistor NPN - Darlington 350V 10A 2MHz 150W Through Hole TO-247-3

NPN BJT 350V 10A 150W TO-247 Power Transistor Product overview: BU323ZG from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 350V, 10A, 150W. Search-friendly keywords include transistor, BJT, switching, amplification, 350V, 10A, 150W, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BU323ZG can be used for catalog matching and distributor lookup.