onsemi Single Bipolar Transistors BU323Z

Description
Bipolar (BJT) Transistor NPN - Darlington 350V 10A 2MHz 150W Through Hole SOT-93
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN - Darlington 350V 10A 2MHz 150W Through Hole SOT-93
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BU323Z-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BU323Z-ND
Single Bipolar Transistors BU323Z-ND
Bipolar (BJT) Transistor NPN - Darlington 350V 10A 2MHz 150W Through Hole SOT-93

Bipolar (BJT) Transistor NPN - Darlington 350V 10A 2MHz 150W Through Hole SOT-93

Buy Now Datasheet
Singapore
Bipolar Transistor
276-BU323Z
Bipolar Transistor 276-BU323Z
NPN Darlington Bipolar Power Transistor, SOT-93 (T0-218) 4 LEAD, 30-TUBE Product overview: BU323Z from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BU323Z can be used for catalog matching and distributor lookup.

NPN Darlington Bipolar Power Transistor, SOT-93 (T0-218) 4 LEAD, 30-TUBE Product overview: BU323Z from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BU323Z can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1325073-BU323Z - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1325073-BU323Z
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1325073-BU323Z
Manufacturer: onsemi Win Source Part Number: 1325073-BU323Z Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Power - Max: 150 W Voltage - Collector Emitter Breakdown (Max): 350 V Current - Collector (Ic) (Max): 10 A Transistor Type: NPN - Darlington Vce Saturation (Max) @ Ib, Ic: 1.7V @ 250mA, 10A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V Frequency - Transition: 2MHz Supplier Device Package: SOT-93 Temperature Range - Operating: -65°C ~ 175°C (TJ) Case / Package: TO-218-3 ECCN: EAR99 Fake Threat In the Open Market: 65 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: 2156-BU323Z-ON,ONSON SBU323Z Base Product Number: BU323 Product Status: Obsolete RoHS Status: RoHS non-compliant

Manufacturer: onsemi
Win Source Part Number: 1325073-BU323Z
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Power - Max: 150 W
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 10 A
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 250mA, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V
Frequency - Transition: 2MHz
Supplier Device Package: SOT-93
Temperature Range - Operating: -65°C ~ 175°C (TJ)
Case / Package: TO-218-3
ECCN: EAR99
Fake Threat In the Open Market: 65
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 2156-BU323Z-ON,ONSONSBU323Z
Base Product Number: BU323
Product Status: Obsolete
RoHS Status: RoHS non-compliant

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BU323Z - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BU323Z
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BU323Z
TRANS NPN DARL 350V 10A SOT93

TRANS NPN DARL 350V 10A SOT93

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BU323Z-ND 276-BU323Z 1325073-BU323Z BU323Z
Product Name Single Bipolar Transistors Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN
Package Type TO-218-3 SOT3; TO-218-3
IC(max) 0.1000 milliamps 10000 milliamps 10000 milliamps
VCEO 350 volts 350 volts
PD 150000 milliwatts
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