onsemi JFETs BSR58LT1

The BSR58LT1 is an N-channel depletion JFET chopper transistor designed for switching applications. It is packaged in a SOT-23 (TO-236) case, with dimensions of 2.80 to 3.04 mm in length, 1.20 to 1.40 mm in width, and 1.78 to 2.04 mm in lead pitch. Maximum drain-gate voltage is -40 Vdc, gate-source voltage is -35 Vdc, and total device dissipation is 350 mW at 25°C, derating at 2.8 mW/°C above 25°C. Operating and storage junction temperature ranges from -65°C to +150°C. The device meets Pb-free requirements and is shipped in tape and reel packaging. Electrical characteristics include a zero-gate-voltage drain current (IDSS) of 8.0 to 80 mA, zero-gate-source cutoff voltage (VGS(off)) of -0.8 to -4.0 V, and static drain-source on-resistance (rDS(on)) of up to 60 Ω. On-capacitance is 28 pF and off-capacitance is 5.0 pF. The part is not intended for use in life support systems or medical implants.