onsemi Single Bipolar Transistors BSR50

The BSR50 is an NPN Darlington transistor designed for high-gain applications at collector currents up to 0.5A. It is packaged in a TO-92-3 case with dimensions of 4.58mm height, 3.60mm width, and 1.27mm lead spacing. The device has a collector-emitter voltage rating of 45V, a continuous collector current rating of 1.5A, and a total power dissipation of 625mW. Its DC current gain ranges from 1,000 to 2,000 depending on collector current. Collector-emitter saturation voltage is 1.3V at 500mA and 1.6V at 1.0A. The storage temperature range is -55°C to 150°C. Thermal resistance from junction to ambient is 200°C/W. The part meets the Absolute Maximum Ratings specified for Si epitaxial transistors and is not rated for life support applications.