onsemi Single FETs, MOSFETs BS170RLRAG

Description
N-Channel 60V 500mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
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Description
N-Channel 60V 500mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - BS170RLRAGOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BS170RLRAGOSTR-ND
Single FETs, MOSFETs BS170RLRAGOSTR-ND
N-Channel 60V 500mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)

N-Channel 60V 500mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)

Buy Now Datasheet
Singapore, Singapore
N-Channel 60V 500mA MOSFET Transistor
278-BS170RLRAG
N-Channel 60V 500mA MOSFET Transistor 278-BS170RLRAG
N-Channel JFET, 60V, 500mA, 5R, TO-92 Product overview: BS170RLRAG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 500mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 500mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BS170RLRAG can be used for catalog matching and distributor lookup.

N-Channel JFET, 60V, 500mA, 5R, TO-92 Product overview: BS170RLRAG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 500mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 500mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BS170RLRAG can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BS170RLRAG - 098415-BS170RLRAG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BS170RLRAG
098415-BS170RLRAG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BS170RLRAG 098415-BS170RLRAG
Manufacturer: ON Semiconductor Win Source Part Number: 098415-BS170RLRAG Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 350mW (Ta) Family Name: BS170 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 500mA (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Input Capacitance: 60pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 Ohm @ 200mA, 10V Alternative Parts (Cross-Reference): TSM2N7000KCT A3; TSM2N7000KCT A3G; BS170; Introduction Date: May 07, 1997 ECCN: EAR99 Country of Origin: Thailand Estimated EOL Date: Obsolete Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 098415-BS170RLRAG
Packaging: Reel - TR
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 350mW (Ta)
Family Name: BS170
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 500mA (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Input Capacitance: 60pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 Ohm @ 200mA, 10V
Alternative Parts (Cross-Reference): TSM2N7000KCT A3; TSM2N7000KCT A3G; BS170;
Introduction Date: May 07, 1997
ECCN: EAR99
Country of Origin: Thailand
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BS170RLRAG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BS170RLRAG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BS170RLRAG
MOSFET N-CH 60V 500MA TO92-3

MOSFET N-CH 60V 500MA TO92-3

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number BS170RLRAGOSTR-ND 278-BS170RLRAG 098415-BS170RLRAG BS170RLRAG
Product Name Single FETs, MOSFETs N-Channel 60V 500mA MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - BS170RLRAG Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-92; TO-226-3, TO-92-3 Long Body, Formed Leads TO-92; SOT3; TO-92-3 TO-92; TO-226-3, TO-92-3 Long Body (Formed Leads)
PD 350 milliwatts 350 milliwatts
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