N-Channel 200V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
Manufacturer: ON Semiconductor
Win Source Part Number: 012116-BS108ZL1G
Packaging: AMMO PACKAGE
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 350mW (Ta)
Family Name: BS108
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2V, 2.8V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 250mA (Ta)
Gate-Source Threshold Voltage: 1.5V @ 1mA
Max Input Capacitance: 150pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 Ohm @ 100mA, 2.8V
Alternative Parts (Cross-Reference): TN0620N3P005; TN0620N3P014; TN0620N3P013;
Introduction Date: January 13, 1997
ECCN: EAR99
Country of Origin: Thailand
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
N-Channel JFET, 200V, 250mA, 8 Ohm, TO-92 Product overview: BS108ZL1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 250mA, 8 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 250mA, 8 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BS108ZL1G can be used for catalog matching and distributor lookup.
MOSFET N-CH 200V 250MA TO92-3
MOSFET N-CH 200V 250MA TO92-3
N CHANNEL MOSFET, 200V, 250mA; Transistor Polarity:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:250µA; On Resistance Rds(on):10ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:2V RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BS108ZL1GOSTB-ND | 012116-BS108ZL1G | 278-BS108ZL1G | BS108ZL1G | BS108ZL1G | 41K9628 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BS108ZL1G | N-Channel 200V 250mA 8 Ohm MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 200V, 250Ma; Transistor Polarity Onsemi |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |
| Package Type | TO-92; TO-226-3, TO-92-3 Long Body, Formed Leads | TO-92; SOT3; TO-92-3 | TO-92; TO-226-3, TO-92-3 Long Body (Formed Leads) | TO-92; TO-226-3, TO-92-3 Long Body (Formed Leads) | TO-3 | |
| V(BR)DSS | 200 volts | 200 volts | ||||
| PD | 350 milliwatts | 350 milliwatts | 350 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
