N-Channel 200V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
Manufacturer: ON Semiconductor
Win Source Part Number: 012114-BS107AG
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 350mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 250mA (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Input Capacitance: 60pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.4 Ohm @ 250mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
MOSFET N-CH 200V 250MA TO92-3
MOSFET N-CH 200V 0.25A TO-92
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BS107AGOS-ND | 012114-BS107AG | BS107AG | 598-BS107AG |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BS107AG | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 200V 0.25A TO-92 |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-92; TO-226-3, TO-92-3 Long Body | TO-92; SOT3; TO-92-3 | TO-92; TO-226-3, TO-92-3 Long Body | |
| V(BR)DSS | 200 volts | 200 volts | ||
| PD | 350 milliwatts | 350 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
