onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - BS107AG BS107AG

Description
Manufacturer: ON Semiconductor Win Source Part Number: 012114-BS107AG Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 350mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 250mA (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Input Capacitance: 60pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.4 Ohm @ 250mA, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - BS107AG - 012114-BS107AG - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - BS107AGOS-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BS107AG - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 200V 0.25A TO-92 - 598-BS107AG - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 012114-BS107AG Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 350mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 250mA (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Input Capacitance: 60pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.4 Ohm @ 250mA, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BS107AG - 012114-BS107AG - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BS107AG
012114-BS107AG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BS107AG 012114-BS107AG
Manufacturer: ON Semiconductor Win Source Part Number: 012114-BS107AG Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 350mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 250mA (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Input Capacitance: 60pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.4 Ohm @ 250mA, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 012114-BS107AG
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 350mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 250mA (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Input Capacitance: 60pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.4 Ohm @ 250mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - BS107AGOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BS107AGOS-ND
Single FETs, MOSFETs BS107AGOS-ND
N-Channel 200V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)

N-Channel 200V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BS107AG - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BS107AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BS107AG
MOSFET N-CH 200V 250MA TO92-3

MOSFET N-CH 200V 250MA TO92-3

Supplier's Site
MOSFET N-CH 200V 0.25A TO-92 - 598-BS107AG - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 200V 0.25A TO-92
598-BS107AG
MOSFET N-CH 200V 0.25A TO-92 598-BS107AG
MOSFET N-CH 200V 0.25A TO-92

MOSFET N-CH 200V 0.25A TO-92

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 012114-BS107AG BS107AGOS-ND BS107AG 598-BS107AG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BS107AG Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 200V 0.25A TO-92
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 200 volts 200 volts
PD 350 milliwatts 350 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-92; SOT3; TO-92-3 TO-92; TO-226-3, TO-92-3 Long Body TO-92; TO-226-3, TO-92-3 Long Body
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