onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - BMS3003-1E BMS3003-1E

Description
Manufacturer: ON Semiconductor Win Source Part Number: 770257-BMS3003-1E Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Full Pack Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 78A (Ta) Family Name: BMS3003 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Manufacturer Package: TO-220F-3SG Channel Type Type: P Drain Source Voltage: 60V Gate Charge (Qg) (Maximum) @ Vgs: 285nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 13200pF @ 20V Vgs (Maximum): ±20V Power Dissipation (Maximum): 2W (Ta), 40W (Tc) Rds On (Maximum) @ Id, Vgs: 6.5 mOhm @ 39A, 10V ECCN: EAR99 Estimated EOL Date: 2027 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 770257-BMS3003-1E Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Full Pack Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 78A (Ta) Family Name: BMS3003 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Manufacturer Package: TO-220F-3SG Channel Type Type: P Drain Source Voltage: 60V Gate Charge (Qg) (Maximum) @ Vgs: 285nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 13200pF @ 20V Vgs (Maximum): ±20V Power Dissipation (Maximum): 2W (Ta), 40W (Tc) Rds On (Maximum) @ Id, Vgs: 6.5 mOhm @ 39A, 10V ECCN: EAR99 Estimated EOL Date: 2027 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BMS3003-1E - 770257-BMS3003-1E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BMS3003-1E
770257-BMS3003-1E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BMS3003-1E 770257-BMS3003-1E
Manufacturer: ON Semiconductor Win Source Part Number: 770257-BMS3003-1E Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Full Pack Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 78A (Ta) Family Name: BMS3003 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Manufacturer Package: TO-220F-3SG Channel Type Type: P Drain Source Voltage: 60V Gate Charge (Qg) (Maximum) @ Vgs: 285nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 13200pF @ 20V Vgs (Maximum): ±20V Power Dissipation (Maximum): 2W (Ta), 40W (Tc) Rds On (Maximum) @ Id, Vgs: 6.5 mOhm @ 39A, 10V ECCN: EAR99 Estimated EOL Date: 2027 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 770257-BMS3003-1E
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3 Full Pack
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 78A (Ta)
Family Name: BMS3003
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Manufacturer Package: TO-220F-3SG
Channel Type Type: P
Drain Source Voltage: 60V
Gate Charge (Qg) (Maximum) @ Vgs: 285nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 13200pF @ 20V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 2W (Ta), 40W (Tc)
Rds On (Maximum) @ Id, Vgs: 6.5 mOhm @ 39A, 10V
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - BMS3003-1E - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
BMS3003-1E
Single FETs, MOSFETs BMS3003-1E
MOSFET P-CH 60V 78A TO220F-3SG

MOSFET P-CH 60V 78A TO220F-3SG

Supplier's Site Datasheet
Single FETs, MOSFETs - BMS3003-1EOS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BMS3003-1EOS-ND
Single FETs, MOSFETs BMS3003-1EOS-ND
P-Channel 60V 78A (Ta) 2W (Ta), 40W (Tc) Through Hole TO-220F-3SG

P-Channel 60V 78A (Ta) 2W (Ta), 40W (Tc) Through Hole TO-220F-3SG

Buy Now Datasheet
MOSFET PCH 4V DRIVE SERIES - 598-BMS3003-1E - Utmel Electronic Limited
Hong Kong, China
MOSFET PCH 4V DRIVE SERIES
598-BMS3003-1E
MOSFET PCH 4V DRIVE SERIES 598-BMS3003-1E
MOSFET PCH 4V DRIVE SERIES

MOSFET PCH 4V DRIVE SERIES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BMS3003-1E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BMS3003-1E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BMS3003-1E
MOSFET P-CH 60V 78A TO220F-3SG

MOSFET P-CH 60V 78A TO220F-3SG

Supplier's Site
Sheung Wan, Hong Kong
MOSFET PCH 4V DRIVE SERIES

MOSFET PCH 4V DRIVE SERIES

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 770257-BMS3003-1E BMS3003-1E BMS3003-1EOS-ND 598-BMS3003-1E BMS3003-1E BMS3003-1E
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BMS3003-1E Single FETs, MOSFETs Single FETs, MOSFETs MOSFET PCH 4V DRIVE SERIES Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
PD 2000 to 40000 milliwatts 2000 milliwatts 2000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3 TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack
Packing Method Tube; Tube Tube; Tube Tube; Tube
Unlock Full Specs
to access all available technical data

Similar Products

1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor - QPD1025 - Qorvo
Specs
Transistor Technology / Material 1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor
Transistor Grade / Operating Range Military
Package Type NI-1230 (Earless)
View Details
2 suppliers
FET, MOSFET Arrays - AUIRF7304Q-ND - DigiKey
Infineon Technologies AG
Specs
Package Type "8-SOIC (0.154"", 3.90mm Width)"
View Details
2 suppliers