onsemi Single Bipolar Transistors BF422G

The BF422G is an NPN silicon bipolar transistor in a TO-92 (TO-226AA) package, rated for a collector-emitter voltage of 250 Vdc and a continuous collector current of 50 mA. It dissipates up to 830 mW at 25°C with a derating of 6.6 mW/°C. The device has a current gain (hFE) of at least 50 at IC = 25 mA and VCE = 20 V, a current gain-bandwidth product of 60 MHz, and a collector-emitter saturation voltage of no more than 0.5 V at IC = 20 mA and IB = 2 mA. It is Pb-free and meets RoHS compliance.