onsemi TRANSISTORS - Transistors (BJT) - Single - BDW46G BDW46G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1152993-BDW46G Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Power - Max: 85W Transistor Type: PNP - Darlington Frequency - Transition: 4MHz Family Name: BDW46 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-220AB Current - Collector (Ic) (Maximum): 15A Voltage - Collector Emitter Breakdown (Maximum): 80V Vce Saturation (Maximum) @ Ib, Ic: 3V @ 50mA, 10A Current - Collector Cutoff (Maximum): 2mA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 1000 @ 5A, 4V Introduction Date: August 31, 1995 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2025 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1152993-BDW46G Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Power - Max: 85W Transistor Type: PNP - Darlington Frequency - Transition: 4MHz Family Name: BDW46 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-220AB Current - Collector (Ic) (Maximum): 15A Voltage - Collector Emitter Breakdown (Maximum): 80V Vce Saturation (Maximum) @ Ib, Ic: 3V @ 50mA, 10A Current - Collector Cutoff (Maximum): 2mA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 1000 @ 5A, 4V Introduction Date: August 31, 1995 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2025 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - BDW46G - 1152993-BDW46G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BDW46G
1152993-BDW46G
TRANSISTORS - Transistors (BJT) - Single - BDW46G 1152993-BDW46G
Manufacturer: ON Semiconductor Win Source Part Number: 1152993-BDW46G Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Power - Max: 85W Transistor Type: PNP - Darlington Frequency - Transition: 4MHz Family Name: BDW46 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-220AB Current - Collector (Ic) (Maximum): 15A Voltage - Collector Emitter Breakdown (Maximum): 80V Vce Saturation (Maximum) @ Ib, Ic: 3V @ 50mA, 10A Current - Collector Cutoff (Maximum): 2mA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 1000 @ 5A, 4V Introduction Date: August 31, 1995 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2025 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 1152993-BDW46G
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Power - Max: 85W
Transistor Type: PNP - Darlington
Frequency - Transition: 4MHz
Family Name: BDW46
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-220AB
Current - Collector (Ic) (Maximum): 15A
Voltage - Collector Emitter Breakdown (Maximum): 80V
Vce Saturation (Maximum) @ Ib, Ic: 3V @ 50mA, 10A
Current - Collector Cutoff (Maximum): 2mA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 1000 @ 5A, 4V
Introduction Date: August 31, 1995
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single Bipolar Transistors - BDW46GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BDW46GOS-ND
Single Bipolar Transistors BDW46GOS-ND
Bipolar (BJT) Transistor PNP - Darlington 80V 15A 4MHz 85W Through Hole TO-220

Bipolar (BJT) Transistor PNP - Darlington 80V 15A 4MHz 85W Through Hole TO-220

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BDW46G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BDW46G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BDW46G
TRANS PNP DARL 80V 15A TO220

TRANS PNP DARL 80V 15A TO220

Supplier's Site
Sheung Wan, Hong Kong
Darlington Transistors
BDW46G
Darlington Transistors BDW46G
Darlington Transistors 15A 80V Bipolar Power PNP

Darlington Transistors 15A 80V Bipolar Power PNP

Buy Now Datasheet
Transistor - 32315602 - Radwell International
Willingboro, NJ, United States
Transistor
32315602
Transistor 32315602
DISCONTINUED BY MANUFACTURER, BIPOLAR (BJT) SINGLE TRANSISTOR, DARLINGTON, PNP, 80 V, 4 MHZ, 85 W, 15 A, 1000 ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, BIPOLAR (BJT) SINGLE TRANSISTOR, DARLINGTON, PNP, 80 V, 4 MHZ, 85 W, 15 A, 1000 ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Radwell International
Product Category RF Transistors Transistors Bipolar RF Transistors Darlington Transistors RF Transistors
Product Number 1152993-BDW46G BDW46GOS-ND BDW46G BDW46G 32315602
Product Name TRANSISTORS - Transistors (BJT) - Single - BDW46G Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) Darlington Transistors Transistor
Polarity PNP PNP
Package Type TO-220; SOT3 TO-220; TO-220-3
Packing Method Tube; Tube Tube; Tube
TJ -55 to 150 C (-67 to 302 F)
Power Gain 1000 dB
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