Manufacturer: ON Semiconductor
Win Source Part Number: 1152984-BDV65BG
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -65°C ~ 150°C (TJ)
Package: TO-247-3
Power - Max: 125W
Transistor Type: NPN - Darlington
Family Name: BDV65B
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-247
Current - Collector (Ic) (Maximum): 10A
Voltage - Collector Emitter Breakdown (Maximum): 100V
Vce Saturation (Maximum) @ Ib, Ic: 2V @ 20mA, 5A
Current - Collector Cutoff (Maximum): 1mA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 1000 @ 5A, 4V
Alternative Parts (Cross-Reference): TIP142; TIP142 Lead Free; NTE270;
Introduction Date: October 01, 1996
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
10A, 100V NPN Darlington Power BJT, TO-247 Product overview: BDV65BG from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10A, 100V. Search-friendly keywords include transistor, BJT, switching, amplification, 10A, 100V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BDV65BG can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor NPN - Darlington 100V 10A 125W Through Hole TO-247-3
TRANS NPN DARL 100V 10A TO247-3
BIPOLAR (BJT) SINGLE TRANSISTOR, DARLINGTON, NPN, 100 V, 125 W, 10 A, 1000 ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
Darlington Transistors 10A 100V Bipolar Power NPN
TO-247-3 Darlington Transistors ROHS
TRANS NPN DARL 100V 10A TO247-3
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Radwell International | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Darlington Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | RF Transistors | Darlington Transistors | Darlington Transistors | Bipolar RF Transistors |
| Product Number | 1152984-BDV65BG | 276-BDV65BG | BDV65BGOS-ND | BDV65BG | 32315612 | BDV65BG | BDV65BG | BDV65BG |
| Product Name | TRANSISTORS - Transistors (BJT) - Single - BDV65BG | 10A 100V Bipolar Transistor | Single Bipolar Transistors | Single Bipolar Transistors | Transistor | Darlington Transistors | Triode/MOS Tube/Transistor >> Darlington Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN | NPN | NPN - Darlington; NPN | ||||
| IC(max) | 1 milliamps | 10000 milliamps | 10000 milliamps | 10000 milliamps | ||||
| TJ | -65 to 150 C (-85 to 302 F) | -65 C (-85 F) | -65 to 150 C (-85 to 302 F) | |||||
| Package Type | TO-247; SOT3 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247 | ||||
| Packing Method | Tube; Tube | Tube; Tube |
