onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single BD810G

Win Source Part Number: 997149-BD810G
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Tube
Standard Package: 50
Power - Max: 90 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 10 A
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 300mA, 3A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 4A, 2V
Frequency - Transition: 1.5MHz
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 47 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: 2156-BD810G-OS,ONSONSBD810G
Base Product Number: BD810
Product Status: Obsolete

PNP BJT Transistor, 80V, 10A, 90W, TO-220 Product overview: BD810G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 10A, 90W, TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 10A, 90W, TO-220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BD810G can be used for catalog matching and distributor lookup.

Bipolar (BJT) Transistor PNP 80V 10A 1.5MHz 90W Through Hole TO-220