onsemi Single Bipolar Transistors BD682STU

Description
Bipolar (BJT) Transistor PNP - Darlington 100V 4A 14W Through Hole TO-126-3
  • Single Bipolar Transistors - BD682STUFS-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - BD682STU - 079611-BD682STU - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD682STU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor PNP - Darlington 100V 4A 14W Through Hole TO-126-3
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - BD682STUFS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD682STUFS-ND
Single Bipolar Transistors BD682STUFS-ND
Bipolar (BJT) Transistor PNP - Darlington 100V 4A 14W Through Hole TO-126-3

Bipolar (BJT) Transistor PNP - Darlington 100V 4A 14W Through Hole TO-126-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BD682STU - 079611-BD682STU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD682STU
079611-BD682STU
TRANSISTORS - Transistors (BJT) - Single - BD682STU 079611-BD682STU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 079611-BD682STU Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: PNP - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 2.5V @ 30mA, 1.5A Collector Cut-off Current(Max): 500μA Typical Gain (hFE) (Min): 750 @ 1.5A, 3V Maximum Power Dissipation: 14W Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 079611-BD682STU
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: PNP - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 2.5V @ 30mA, 1.5A
Collector Cut-off Current(Max): 500μA
Typical Gain (hFE) (Min): 750 @ 1.5A, 3V
Maximum Power Dissipation: 14W
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Darlington Transistors
BD682STU
Darlington Transistors BD682STU
Darlington Transistors PNP Epitaxial Sil

Darlington Transistors PNP Epitaxial Sil

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD682STU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD682STU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD682STU
TRANS PNP DARL 100V 4A TO126-3

TRANS PNP DARL 100V 4A TO126-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Darlington Transistors Bipolar RF Transistors
Product Number BD682STUFS-ND 079611-BD682STU BD682STU BD682STU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BD682STU Darlington Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; PNP - Darlington
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