onsemi Single Bipolar Transistors BD681G

Description
Bipolar (BJT) Transistor NPN - Darlington 100V 4A 40W Through Hole TO-126
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN - Darlington 100V 4A 40W Through Hole TO-126
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BD681GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD681GOS-ND
Single Bipolar Transistors BD681GOS-ND
Bipolar (BJT) Transistor NPN - Darlington 100V 4A 40W Through Hole TO-126

Bipolar (BJT) Transistor NPN - Darlington 100V 4A 40W Through Hole TO-126

Buy Now Datasheet
Single Bipolar Transistors - BD681G - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
BD681G
Single Bipolar Transistors BD681G
TRANS NPN DARL 100V 4A TO126

TRANS NPN DARL 100V 4A TO126

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - BD681G - 011459-BD681G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD681G
011459-BD681G
TRANSISTORS - Transistors (BJT) - Single - BD681G 011459-BD681G
Manufacturer: ON Semiconductor Win Source Part Number: 011459-BD681G Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN - Darlington Family Name: BD681 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-225AA Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 2.5V @ 30mA, 1.5A Collector Cut-off Current(Max): 500μA Typical Gain (hFE) (Min): 750 @ 1.5A, 3V Maximum Power Dissipation: 40W Alternative Parts (Cross-Reference): NTD560; BD681; Introduction Date: August 31, 1995 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management

Manufacturer: ON Semiconductor
Win Source Part Number: 011459-BD681G
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN - Darlington
Family Name: BD681
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-225AA
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 2.5V @ 30mA, 1.5A
Collector Cut-off Current(Max): 500μA
Typical Gain (hFE) (Min): 750 @ 1.5A, 3V
Maximum Power Dissipation: 40W
Alternative Parts (Cross-Reference): NTD560; BD681;
Introduction Date: August 31, 1995
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD681G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD681G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD681G
TRANS NPN DARL 100V 4A TO126

TRANS NPN DARL 100V 4A TO126

Supplier's Site
Darlington Transistor, Npn, 100V, To-225; Transistor Polarity Onsemi - 26K3524 - Newark, An Avnet Company
Chicago, IL, United States
Darlington Transistor, Npn, 100V, To-225; Transistor Polarity Onsemi
26K3524
Darlington Transistor, Npn, 100V, To-225; Transistor Polarity Onsemi 26K3524
DARLINGTON TRANSISTOR, NPN, 100V, TO-225; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

DARLINGTON TRANSISTOR, NPN, 100V, TO-225; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Darlington Transistors
BD681G
Darlington Transistors BD681G
Darlington Transistors 4A 100V Bipolar Power NPN

Darlington Transistors 4A 100V Bipolar Power NPN

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Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors Darlington Transistors Bipolar RF Transistors Darlington Transistors Darlington Transistors
Product Number BD681GOS-ND BD681G 011459-BD681G BD681G 26K3524 BD681G
Product Name Single Bipolar Transistors Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BD681G Discrete Semiconductor Products - Transistors - Bipolar (BJT) Darlington Transistor, Npn, 100V, To-225; Transistor Polarity Onsemi Darlington Transistors
Polarity NPN NPN - Darlington; NPN NPN; NPN - Darlington NPN
Package Type TO-225AA, TO-126-3 TO-225AA, TO-126-3 SOT3; TO-225AA TO-3
IC(max) 4000 milliamps 4000 milliamps 4000 milliamps 4000 milliamps
VCEO 100 volts 100 volts 100 volts 100 volts
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