Bipolar (BJT) Transistor NPN - Darlington 100V 4A 40W Through Hole TO-126
Manufacturer: ON Semiconductor
Win Source Part Number: 011459-BD681G
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN - Darlington
Family Name: BD681
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-225AA
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 2.5V @ 30mA, 1.5A
Collector Cut-off Current(Max): 500μA
Typical Gain (hFE) (Min): 750 @ 1.5A, 3V
Maximum Power Dissipation: 40W
Alternative Parts (Cross-Reference): NTD560; BD681;
Introduction Date: August 31, 1995
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
TRANS NPN DARL 100V 4A TO126
NPN Darlington Transistor 100V 4A 40W TO-225 Product overview: BD681G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 4A, 40W. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 4A, 40W, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BD681G can be used for catalog matching and distributor lookup.
TRANS NPN DARL 100V 4A TO126
DARLINGTON TRANSISTOR, NPN, 100V, TO-225; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
Darlington Transistors 4A 100V Bipolar Power NPN
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Darlington Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Darlington Transistors | Darlington Transistors |
| Product Number | BD681GOS-ND | 011459-BD681G | BD681G | 276-BD681G | BD681G | 26K3524 | BD681G |
| Product Name | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - BD681G | Single Bipolar Transistors | 100V 4A 40W Bipolar Transistor | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Darlington Transistor, Npn, 100V, To-225; Transistor Polarity Onsemi | Darlington Transistors |
| Polarity | NPN | NPN; NPN - Darlington | NPN - Darlington; NPN | NPN | NPN | ||
| Package Type | TO-225AA, TO-126-3 | SOT3; TO-225AA | TO-225AA, TO-126-3 | TO-3 | |||
| VCEO | 100 volts | 100 volts | 100 volts | 100 volts | 100 volts | ||
| IC(max) | 4000 milliamps | 4000 milliamps | 4000 milliamps | 4000 milliamps | 4000 milliamps | ||
| PD | 40000 milliwatts | 40000 milliwatts | 40000 milliwatts |
