onsemi TRANSISTORS - Transistors (BJT) - Single - BD679AS BD679AS

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 011457-BD679AS Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 2.8V @ 40mA, 2A Collector Cut-off Current(Max): 500μA Typical Gain (hFE) (Min): 750 @ 2A, 3V Maximum Power Dissipation: 40W Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 011457-BD679AS Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 2.8V @ 40mA, 2A Collector Cut-off Current(Max): 500μA Typical Gain (hFE) (Min): 750 @ 2A, 3V Maximum Power Dissipation: 40W Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - BD679AS - 011457-BD679AS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD679AS
011457-BD679AS
TRANSISTORS - Transistors (BJT) - Single - BD679AS 011457-BD679AS
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 011457-BD679AS Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 2.8V @ 40mA, 2A Collector Cut-off Current(Max): 500μA Typical Gain (hFE) (Min): 750 @ 2A, 3V Maximum Power Dissipation: 40W Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 011457-BD679AS
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 2.8V @ 40mA, 2A
Collector Cut-off Current(Max): 500μA
Typical Gain (hFE) (Min): 750 @ 2A, 3V
Maximum Power Dissipation: 40W
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single Bipolar Transistors - BD679AS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD679AS-ND
Single Bipolar Transistors BD679AS-ND
Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126-3

Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126-3

Buy Now Datasheet
MOSFET Transistor 2088-BD679AS
Darlington Transistors NPN Epitaxial Sil Product overview: BD679AS from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BD679AS can be used for catalog matching and distributor lookup.

Darlington Transistors NPN Epitaxial Sil Product overview: BD679AS from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BD679AS can be used for catalog matching and distributor lookup.

Supplier's Site
Sheung Wan, Hong Kong
Darlington Transistors
BD679AS
Darlington Transistors BD679AS
Darlington Transistors NPN Epitaxial Sil

Darlington Transistors NPN Epitaxial Sil

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD679AS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD679AS
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD679AS
TRANS NPN DARL 80V 4A TO126-3

TRANS NPN DARL 80V 4A TO126-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Darlington Transistors Bipolar RF Transistors
Product Number 011457-BD679AS BD679AS-ND 2088-BD679AS BD679AS BD679AS
Product Name TRANSISTORS - Transistors (BJT) - Single - BD679AS Single Bipolar Transistors MOSFET Transistor Darlington Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN - Darlington NPN
Package Type SOT3; TO-126 TO-225AA, TO-126-3 Bulk
PD 40 milliwatts
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