Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 011457-BD679AS
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 2.8V @ 40mA, 2A
Collector Cut-off Current(Max): 500μA
Typical Gain (hFE) (Min): 750 @ 2A, 3V
Maximum Power Dissipation: 40W
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Darlington Transistors NPN Epitaxial Sil
TRANS NPN DARL 80V 4A TO126-3
| DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Transistors | Darlington Transistors | Bipolar RF Transistors |
| Product Number | BD679AS-ND | 011457-BD679AS | BD679AS | BD679AS |
| Product Name | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - BD679AS | Darlington Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN; NPN - Darlington |
