Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126
Manufacturer: ON Semiconductor
Win Source Part Number: 039621-BD679AG
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-225AA
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 2.8V @ 40mA, 2A
Collector Cut-off Current(Max): 500μA
Typical Gain (hFE) (Min): 750 @ 2A, 3V
Maximum Power Dissipation: 40W
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
TRANS NPN DARL 80V 4A TO126
Darlington Transistors 4A 80V Bipolar Power NPN
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Darlington Transistors |
| Product Number | BD679AGOS-ND | 039621-BD679AG | BD679AG | BD679AG |
| Product Name | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - BD679AG | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Darlington Transistors |
| Polarity | NPN | NPN; NPN - Darlington |
