onsemi TRANSISTORS - Transistors (BJT) - Single - BD678G BD678G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 769912-BD678G Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-225AA, TO-126-3 Power - Max: 40W Transistor Type: PNP - Darlington Family Name: BD678 Categories: Discrete Semiconductor Products Manufacturer Package: TO-225AA Current - Collector (Ic) (Maximum): 4A Voltage - Collector Emitter Breakdown (Maximum): 60V Vce Saturation (Maximum) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Maximum): 500μA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 750 @ 1.5A, 3V Alternative Parts (Cross-Reference): NTE2546; BD678; Introduction Date: August 31, 1995 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 769912-BD678G Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-225AA, TO-126-3 Power - Max: 40W Transistor Type: PNP - Darlington Family Name: BD678 Categories: Discrete Semiconductor Products Manufacturer Package: TO-225AA Current - Collector (Ic) (Maximum): 4A Voltage - Collector Emitter Breakdown (Maximum): 60V Vce Saturation (Maximum) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Maximum): 500μA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 750 @ 1.5A, 3V Alternative Parts (Cross-Reference): NTE2546; BD678; Introduction Date: August 31, 1995 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - BD678G - 769912-BD678G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD678G
769912-BD678G
TRANSISTORS - Transistors (BJT) - Single - BD678G 769912-BD678G
Manufacturer: ON Semiconductor Win Source Part Number: 769912-BD678G Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-225AA, TO-126-3 Power - Max: 40W Transistor Type: PNP - Darlington Family Name: BD678 Categories: Discrete Semiconductor Products Manufacturer Package: TO-225AA Current - Collector (Ic) (Maximum): 4A Voltage - Collector Emitter Breakdown (Maximum): 60V Vce Saturation (Maximum) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Maximum): 500μA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 750 @ 1.5A, 3V Alternative Parts (Cross-Reference): NTE2546; BD678; Introduction Date: August 31, 1995 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 769912-BD678G
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-225AA, TO-126-3
Power - Max: 40W
Transistor Type: PNP - Darlington
Family Name: BD678
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-225AA
Current - Collector (Ic) (Maximum): 4A
Voltage - Collector Emitter Breakdown (Maximum): 60V
Vce Saturation (Maximum) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Maximum): 500μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 750 @ 1.5A, 3V
Alternative Parts (Cross-Reference): NTE2546; BD678;
Introduction Date: August 31, 1995
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Transistor - 32315590 - Radwell International
Willingboro, NJ, United States
Transistor
32315590
Transistor 32315590
DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 4A I(C), 60V V(BR)CEO, 1-ELEMENT, PNP, SILICON, TO-225AA, PLASTIC/EPOXY, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 4A I(C), 60V V(BR)CEO, 1-ELEMENT, PNP, SILICON, TO-225AA, PLASTIC/EPOXY, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single Bipolar Transistors - BD678GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD678GOS-ND
Single Bipolar Transistors BD678GOS-ND
Bipolar (BJT) Transistor PNP - Darlington 60V 4A 40W Through Hole TO-126

Bipolar (BJT) Transistor PNP - Darlington 60V 4A 40W Through Hole TO-126

Buy Now Datasheet
Sheung Wan, Hong Kong
Darlington Transistors
BD678G
Darlington Transistors BD678G
Darlington Transistors 4A 60V Bipolar Power PNP

Darlington Transistors 4A 60V Bipolar Power PNP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD678G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD678G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD678G
TRANS PNP DARL 60V 4A TO126

TRANS PNP DARL 60V 4A TO126

Supplier's Site

Technical Specifications

  Win Source Electronics Radwell International DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Darlington Transistors RF Transistors Transistors Darlington Transistors Bipolar RF Transistors
Product Number 769912-BD678G 32315590 BD678GOS-ND BD678G BD678G
Product Name TRANSISTORS - Transistors (BJT) - Single - BD678G Transistor Single Bipolar Transistors Darlington Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP
IC(max) 0.5000 milliamps 4000 milliamps
TJ -55 to 150 C (-67 to 302 F)
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