onsemi Single Bipolar Transistors BD677ASTU

Description
Bipolar (BJT) Transistor NPN - Darlington 60V 4A 40W Through Hole TO-126-3
  • Single Bipolar Transistors - BD677ASTU-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - BD677ASTU - 200996-BD677ASTU - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD677ASTU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor NPN - Darlington 60V 4A 40W Through Hole TO-126-3
Request a Quote Datasheet

Suppliers

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Product
Description
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Single Bipolar Transistors - BD677ASTU-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD677ASTU-ND
Single Bipolar Transistors BD677ASTU-ND
Bipolar (BJT) Transistor NPN - Darlington 60V 4A 40W Through Hole TO-126-3

Bipolar (BJT) Transistor NPN - Darlington 60V 4A 40W Through Hole TO-126-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BD677ASTU - 200996-BD677ASTU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD677ASTU
200996-BD677ASTU
TRANSISTORS - Transistors (BJT) - Single - BD677ASTU 200996-BD677ASTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 200996-BD677ASTU Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 2.8V @ 40mA, 2A Collector Cut-off Current(Max): 500μA Typical Gain (hFE) (Min): 750 @ 2A, 3V Maximum Power Dissipation: 40W Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 200996-BD677ASTU
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 2.8V @ 40mA, 2A
Collector Cut-off Current(Max): 500μA
Typical Gain (hFE) (Min): 750 @ 2A, 3V
Maximum Power Dissipation: 40W
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD677ASTU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD677ASTU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD677ASTU
TRANS NPN DARL 60V 4A TO126-3

TRANS NPN DARL 60V 4A TO126-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number BD677ASTU-ND 200996-BD677ASTU BD677ASTU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BD677ASTU Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN - Darlington
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