onsemi TRANSISTORS - Transistors (BJT) - Single - BD677ASTU BD677ASTU

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 200996-BD677ASTU
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 2.8V @ 40mA, 2A
Collector Cut-off Current(Max): 500μA
Typical Gain (hFE) (Min): 750 @ 2A, 3V
Maximum Power Dissipation: 40W
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited

Bipolar (BJT) Transistor NPN - Darlington 60V 4A 40W Through Hole TO-126-3

NPN Darlington BJT, 60V, 4A, 40W, TO-126, Through Hole Product overview: BD677ASTU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 60V, 4A, 40W. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 60V, 4A, 40W, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BD677ASTU can be used for catalog matching and distributor lookup.