onsemi Single Bipolar Transistors BD676AS

Bipolar (BJT) Transistor PNP - Darlington 45V 4A 14W Through Hole TO-126-3

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 079607-BD676AS
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: PNP - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 45V
Max Vce (sat): 2.8V @ 40mA, 2A
Collector Cut-off Current(Max): 500μA
Typical Gain (hFE) (Min): 750 @ 2A, 3V
Maximum Power Dissipation: 14W
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
Quantity per package: 2k pcs

PNP Darlington Power Transistor, 45V, 4A, 750hFE, TO-126 Product overview: BD676AS from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 45V, 4A. Search-friendly keywords include transistor, BJT, switching, amplification, 45V, 4A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BD676AS can be used for catalog matching and distributor lookup.