onsemi Single Bipolar Transistors BD676AS

Description
Bipolar (BJT) Transistor PNP - Darlington 45V 4A 14W Through Hole TO-126-3
  • Single Bipolar Transistors - BD676ASOS-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - BD676AS - 079607-BD676AS - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD676AS - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor PNP - Darlington 45V 4A 14W Through Hole TO-126-3
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - BD676ASOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD676ASOS-ND
Single Bipolar Transistors BD676ASOS-ND
Bipolar (BJT) Transistor PNP - Darlington 45V 4A 14W Through Hole TO-126-3

Bipolar (BJT) Transistor PNP - Darlington 45V 4A 14W Through Hole TO-126-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BD676AS - 079607-BD676AS - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD676AS
079607-BD676AS
TRANSISTORS - Transistors (BJT) - Single - BD676AS 079607-BD676AS
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 079607-BD676AS Packaging: Bulk Mounting: Through Hole Transistor Polarity: PNP - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 2.8V @ 40mA, 2A Collector Cut-off Current(Max): 500μA Typical Gain (hFE) (Min): 750 @ 2A, 3V Maximum Power Dissipation: 14W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 079607-BD676AS
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: PNP - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 45V
Max Vce (sat): 2.8V @ 40mA, 2A
Collector Cut-off Current(Max): 500μA
Typical Gain (hFE) (Min): 750 @ 2A, 3V
Maximum Power Dissipation: 14W
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
Quantity per package: 2k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD676AS - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD676AS
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD676AS
TRANS PNP DARL 45V 4A TO126-3

TRANS PNP DARL 45V 4A TO126-3

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number BD676ASOS-ND 079607-BD676AS BD676AS
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BD676AS Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; PNP - Darlington
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