onsemi TRANSISTORS - Transistors (BJT) - Single - BD676 BD676

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 234443-BD676 Packaging: Bulk Mounting: Through Hole Transistor Polarity: PNP - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 2.8V @ 40mA, 2A Collector Cut-off Current(Max): 500μA Typical Gain (hFE) (Min): 750 @ 2A, 3V Maximum Power Dissipation: 14W Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance Quantity per package: 500
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 234443-BD676 Packaging: Bulk Mounting: Through Hole Transistor Polarity: PNP - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 2.8V @ 40mA, 2A Collector Cut-off Current(Max): 500μA Typical Gain (hFE) (Min): 750 @ 2A, 3V Maximum Power Dissipation: 14W Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance Quantity per package: 500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - BD676 - 234443-BD676 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD676
234443-BD676
TRANSISTORS - Transistors (BJT) - Single - BD676 234443-BD676
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 234443-BD676 Packaging: Bulk Mounting: Through Hole Transistor Polarity: PNP - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 2.8V @ 40mA, 2A Collector Cut-off Current(Max): 500μA Typical Gain (hFE) (Min): 750 @ 2A, 3V Maximum Power Dissipation: 14W Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance Quantity per package: 500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 234443-BD676
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: PNP - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 45V
Max Vce (sat): 2.8V @ 40mA, 2A
Collector Cut-off Current(Max): 500μA
Typical Gain (hFE) (Min): 750 @ 2A, 3V
Maximum Power Dissipation: 14W
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
Quantity per package: 500

Buy Now Datasheet
Singapore
Bipolar Transistor
276-BD676
Bipolar Transistor 276-BD676
Medium Power PNP Darlington Bipolar Power Transistor, TO-225, 500-BLKBX Product overview: BD676 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BD676 can be used for catalog matching and distributor lookup.

Medium Power PNP Darlington Bipolar Power Transistor, TO-225, 500-BLKBX Product overview: BD676 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BD676 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - BD676-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD676-ND
Single Bipolar Transistors BD676-ND
Bipolar (BJT) Transistor PNP - Darlington 45V 4A 40W Through Hole TO-126

Bipolar (BJT) Transistor PNP - Darlington 45V 4A 40W Through Hole TO-126

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD676 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD676
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD676
TRANS PNP DARL 45V 4A TO126

TRANS PNP DARL 45V 4A TO126

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 234443-BD676 276-BD676 BD676-ND BD676
Product Name TRANSISTORS - Transistors (BJT) - Single - BD676 Bipolar Transistor Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; PNP - Darlington PNP PNP
Package Type SOT3; TO-126 TO-225AA, TO-126-3
IC(max) 0.5000 milliamps 4000 milliamps
VCEO 45 volts 45 volts
Unlock Full Specs
to access all available technical data