onsemi Single Bipolar Transistors BD675

Description
TRANS NPN DARL 45V 4A TO126
Request a Quote Datasheet
Description
TRANS NPN DARL 45V 4A TO126
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BD675 - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
BD675
Single Bipolar Transistors BD675
TRANS NPN DARL 45V 4A TO126

TRANS NPN DARL 45V 4A TO126

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors - 1381580-BD675 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
1381580-BD675
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors 1381580-BD675
Win Source Part Number: 1381580-BD675 Category: Discrete Semiconductor Products>Transistors >Bipolar (BJT)>Single Bipolar Transistors Package: Bulk Standard Package: 500 pcs Power - Max: 40 W Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 4 A Transistor Type: NPN - Darlington Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126 Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: ON Semiconductor Base Product Number: BD675 Product Status: Obsolete RoHS Status: RoHS non-compliant Moisture Sensitivity Level (MSL): 1 (Unlimited)

Win Source Part Number: 1381580-BD675
Category: Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Single Bipolar Transistors
Package: Bulk
Standard Package: 500 pcs
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 4 A
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: ON Semiconductor
Base Product Number: BD675
Product Status: Obsolete
RoHS Status: RoHS non-compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Buy Now Datasheet
Single Bipolar Transistors - BD675-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD675-ND
Single Bipolar Transistors BD675-ND
Bipolar (BJT) Transistor NPN - Darlington 45V 4A 40W Through Hole TO-126

Bipolar (BJT) Transistor NPN - Darlington 45V 4A 40W Through Hole TO-126

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD675 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD675
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD675
TRANS NPN DARL 45V 4A TO126

TRANS NPN DARL 45V 4A TO126

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number BD675 1381580-BD675 BD675-ND BD675
Product Name Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN - Darlington; NPN NPN NPN
Package Type TO-225AA, TO-126-3 SOT3 TO-225AA, TO-126-3
IC(max) 4000 milliamps 4000 milliamps 4000 milliamps
VCEO 45 volts 45 volts
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