onsemi Single Bipolar Transistors BD538J

Description
Bipolar (BJT) Transistor PNP 80V 8A 12MHz 50W Through Hole TO-220-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 80V 8A 12MHz 50W Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

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Product
Description
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Single Bipolar Transistors - BD538J-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD538J-ND
Single Bipolar Transistors BD538J-ND
Bipolar (BJT) Transistor PNP 80V 8A 12MHz 50W Through Hole TO-220-3

Bipolar (BJT) Transistor PNP 80V 8A 12MHz 50W Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BD538J - 769900-BD538J - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD538J
769900-BD538J
TRANSISTORS - Transistors (BJT) - Single - BD538J 769900-BD538J
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 769900-BD538J Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-220-3 Power - Max: 50W Transistor Type: PNP Frequency - Transition: 12MHz Part Status: Obsolete(EOL) Family Name: BD538J Categories: Discrete Semiconductor Products Manufacturer Package: TO-220 Current - Collector (Ic) (Maximum): 8A Voltage - Collector Emitter Breakdown (Maximum): 80V Vce Saturation (Maximum) @ Ib, Ic: 800mV @ 600mA, 6A Current - Collector Cutoff (Maximum): 100μA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 30 @ 2A, 2V Alternative Parts (Cross-Reference): BD538; BD244B; TIP106-BP; TIP42B Tin/Lead; Introduction Date: November 14, 2000 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 769900-BD538J
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-220-3
Power - Max: 50W
Transistor Type: PNP
Frequency - Transition: 12MHz
Part Status: Obsolete(EOL)
Family Name: BD538J
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-220
Current - Collector (Ic) (Maximum): 8A
Voltage - Collector Emitter Breakdown (Maximum): 80V
Vce Saturation (Maximum) @ Ib, Ic: 800mV @ 600mA, 6A
Current - Collector Cutoff (Maximum): 100μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 30 @ 2A, 2V
Alternative Parts (Cross-Reference): BD538; BD244B; TIP106-BP; TIP42B Tin/Lead;
Introduction Date: November 14, 2000
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD538J - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD538J
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD538J
TRANS PNP 80V 8A TO220-3

TRANS PNP 80V 8A TO220-3

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BD538J-ND 769900-BD538J BD538J
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BD538J Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP
Package Type TO-220; TO-220-3 TO-220; SOT3
Packing Method Bulk; Bulk Bulk; Bulk
IC(max) 0.1000 milliamps 8000 milliamps
Power Gain 30 dB
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