onsemi TRANSISTORS - RF Transistors (BJT) - BD537-K BD537-K

Manufacturer: Fairchild/ON Semiconductor
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1178913-BD537-K
Packaging: Bulk
Current Rating: 8 A
Frequency: 12 MHz
Polarity: NPN
Number of Elements: 1
Power Dissipation: 50 W
Gain Bandwidth Product: 12 MHz
Categories: RF Transistors(BJT)
Case / Package: TO-220-3
Alternative Parts (Cross-Reference): BD537K;
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
Lead Free: Lead Free
Mount: Through Hole
RoHS: Compliant
Min Operating Temperature: -65 °C
Voltage Rating (DC): 80 V
Element Configuration: Single
Max Power Dissipation: 50 W
Max Operating Temperature: 150 °C
Collector Base Voltage (VCBO): 80 V
Collector Emitter Breakdown Voltage: 80 V
Collector Emitter Voltage (VCEO): 80 V
Emitter Base Voltage (VEBO): 5 V
hFE Min: 40
Max Collector Current: 8 A
Transition Frequency: 12 MHz

Trans NPN 80V 8A TO-220 Product overview: BD537-K from ON Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 8A, TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 8A, TO-220, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BD537-K can be used for catalog matching and distributor lookup.