onsemi TRANSISTORS - Transistors (BJT) - Single - BD439S BD439S

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 011311-BD439S Packaging: Bulk Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 800mV @ 200mA, 2A Collector Cut-off Current(Max): 100μA (ICBO) Typical Gain (hFE) (Min): 20 @ 10mA, 5V Maximum Power Dissipation: 36W Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 011311-BD439S Packaging: Bulk Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 800mV @ 200mA, 2A Collector Cut-off Current(Max): 100μA (ICBO) Typical Gain (hFE) (Min): 20 @ 10mA, 5V Maximum Power Dissipation: 36W Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - BD439S - 011311-BD439S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD439S
011311-BD439S
TRANSISTORS - Transistors (BJT) - Single - BD439S 011311-BD439S
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 011311-BD439S Packaging: Bulk Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 800mV @ 200mA, 2A Collector Cut-off Current(Max): 100μA (ICBO) Typical Gain (hFE) (Min): 20 @ 10mA, 5V Maximum Power Dissipation: 36W Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 011311-BD439S
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 3MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 800mV @ 200mA, 2A
Collector Cut-off Current(Max): 100μA (ICBO)
Typical Gain (hFE) (Min): 20 @ 10mA, 5V
Maximum Power Dissipation: 36W
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single Bipolar Transistors - BD439S-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD439S-ND
Single Bipolar Transistors BD439S-ND
Bipolar (BJT) Transistor NPN 60V 4A 3MHz 36W Through Hole TO-126-3

Bipolar (BJT) Transistor NPN 60V 4A 3MHz 36W Through Hole TO-126-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD439S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD439S
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD439S
TRANS NPN 60V 4A TO126-3

TRANS NPN 60V 4A TO126-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 011311-BD439S BD439S-ND BD439S
Product Name TRANSISTORS - Transistors (BJT) - Single - BD439S Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN
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