onsemi TRANSISTORS - Transistors (BJT) - Single - BD439S BD439S

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 011311-BD439S
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 3MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 800mV @ 200mA, 2A
Collector Cut-off Current(Max): 100μA (ICBO)
Typical Gain (hFE) (Min): 20 @ 10mA, 5V
Maximum Power Dissipation: 36W
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited

Bipolar (BJT) Transistor NPN 60V 4A 3MHz 36W Through Hole TO-126-3

NPN BJT Transistor, 60V, 4A, 36W, TO-126, Through Hole Product overview: BD439S from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 60V, 4A, 36W. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 60V, 4A, 36W, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BD439S can be used for catalog matching and distributor lookup.