Medium Power NPN Bipolar Power Transistor, TO-225, 500-BLKBX Product overview: BD439G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BD439G can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor NPN 60V 4A 3MHz 36W Through Hole TO-126
TRANS NPN 60V 4A TO126
Manufacturer: ON Semiconductor
Win Source Part Number: 200979-BD439G
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 3MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-225AA
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 800mV @ 300mA, 3A
Collector Cut-off Current(Max): 100μA (ICBO)
Typical Gain (hFE) (Min): 40 @ 500mA, 1V
Maximum Power Dissipation: 36W
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
TRANS NPN 60V 4A TO126
BIPOLAR TRANSISTOR, NPN, 60V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; DC Collector Current:4A; Power Dissipation Pd:36W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency ft:3MHz RoHS Compliant: Yes
TRANSISTOR, NPN, 60V, 4A, TO-225; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:3MHz; Power Dissipation Pd:36W; DC Collector Current:4A; DC Current Gain hFE:20hFE; Transistor Case RoHS Compliant: Yes
Bipolar Transistors - BJT 4A 60V 36W NPN
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors |
| Product Number | 276-BD439G | BD439G-ND | BD439G | 200979-BD439G | BD439G | 26K3512 | 50AC4849 | BD439G |
| Product Name | Bipolar Transistor | Single Bipolar Transistors | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - BD439G | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistor, Npn, 60V; Transistor Polarity Onsemi | Transistor, Npn, 60V, 4A, To-225; Transistor Polarity Onsemi | Bipolar Transistors - BJT |
| Polarity | NPN | NPN | NPN; NPN | NPN; NPN | NPN | NPN | ||
| IC(max) | 4000 milliamps | 4000 milliamps | 4000 milliamps | 4000 milliamps | ||||
| VCEO | 60 volts | 60 volts | 60 volts | |||||
| VCBO | 60 volts | |||||||
| fT | 3 MHz |
