onsemi Single Bipolar Transistors BD435

Description
Trans GP BJT NPN 32V 4A 3-Pin TO-225 Bulk
  • BD435 - Rochester Electronics
    Rochester Electronics
  • Single Bipolar Transistors - BD435-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - BD435 - 234293-BD435 - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
Trans GP BJT NPN 32V 4A 3-Pin TO-225 Bulk
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
- BD435 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
BD435
BD435
Trans GP BJT NPN 32V 4A 3-Pin TO-225 Bulk

Trans GP BJT NPN 32V 4A 3-Pin TO-225 Bulk

Supplier's Site Datasheet
Single Bipolar Transistors - BD435-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD435-ND
Single Bipolar Transistors BD435-ND
Bipolar (BJT) Transistor NPN 32V 4A 3MHz 36W Through Hole TO-126

Bipolar (BJT) Transistor NPN 32V 4A 3MHz 36W Through Hole TO-126

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BD435 - 234293-BD435 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD435
234293-BD435
TRANSISTORS - Transistors (BJT) - Single - BD435 234293-BD435
Manufacturer: ON Semiconductor Win Source Part Number: 234293-BD435 Packaging: Bulk Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-225AA Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 32V Max Vce (sat): 500mV @ 200mA, 2A Collector Cut-off Current(Max): 100μA (ICBO) Typical Gain (hFE) (Min): 85 @ 500mA, 1V Maximum Power Dissipation: 36W Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 234293-BD435
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 3MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-225AA
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 32V
Max Vce (sat): 500mV @ 200mA, 2A
Collector Cut-off Current(Max): 100μA (ICBO)
Typical Gain (hFE) (Min): 85 @ 500mA, 1V
Maximum Power Dissipation: 36W
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet

Technical Specifications

  Rochester Electronics DigiKey Win Source Electronics
Product Category Bipolar RF Transistors Transistors Transistors
Product Number BD435 BD435-ND 234293-BD435
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BD435
Polarity NPN NPN NPN; NPN
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