Bipolar (BJT) Transistor NPN 22V 4A 3MHz 36W Through Hole TO-126-3
Bipolar (BJT) Transistor NPN 22V 4A 3MHz 36W Through Hole TO-126-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1022910-BD433S
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 3MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 22V
Max Vce (sat): 500mV @ 200mA, 2A
Collector Cut-off Current(Max): 100μA
Typical Gain (hFE) (Min): 40 @ 10mA, 5V
Maximum Power Dissipation: 36W
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
Quantity per package: 2k pcs
Bipolar Transistors - BJT NPN Epitaxial Sil
TRANS NPN 22V 4A TO126-3
| DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | BD433S-ND | 1022910-BD433S | BD433S | BD433S |
| Product Name | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - BD433S | Bipolar Transistors - BJT | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN; NPN |
