onsemi Single Bipolar Transistors BD433S

Description
Bipolar (BJT) Transistor NPN 22V 4A 3MHz 36W Through Hole TO-126-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 22V 4A 3MHz 36W Through Hole TO-126-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BD433S-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD433S-ND
Single Bipolar Transistors BD433S-ND
Bipolar (BJT) Transistor NPN 22V 4A 3MHz 36W Through Hole TO-126-3

Bipolar (BJT) Transistor NPN 22V 4A 3MHz 36W Through Hole TO-126-3

Buy Now Datasheet
Single Bipolar Transistors - 488-BD433S-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
488-BD433S-ND
Single Bipolar Transistors 488-BD433S-ND
Bipolar (BJT) Transistor NPN 22V 4A 3MHz 36W Through Hole TO-126-3

Bipolar (BJT) Transistor NPN 22V 4A 3MHz 36W Through Hole TO-126-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BD433S - 1022910-BD433S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD433S
1022910-BD433S
TRANSISTORS - Transistors (BJT) - Single - BD433S 1022910-BD433S
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1022910-BD433S Packaging: Bulk Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 22V Max Vce (sat): 500mV @ 200mA, 2A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 40 @ 10mA, 5V Maximum Power Dissipation: 36W Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1022910-BD433S
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 3MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 22V
Max Vce (sat): 500mV @ 200mA, 2A
Collector Cut-off Current(Max): 100μA
Typical Gain (hFE) (Min): 40 @ 10mA, 5V
Maximum Power Dissipation: 36W
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
Quantity per package: 2k pcs

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BD433S
Bipolar Transistors - BJT BD433S
Bipolar Transistors - BJT NPN Epitaxial Sil

Bipolar Transistors - BJT NPN Epitaxial Sil

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD433S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD433S
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD433S
TRANS NPN 22V 4A TO126-3

TRANS NPN 22V 4A TO126-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BD433S-ND 1022910-BD433S BD433S BD433S
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BD433S Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
Unlock Full Specs
to access all available technical data