PNP EPITAXIAL SILICON TRANSISTOR
Bipolar (BJT) Transistor PNP 100V 6A 65W Through Hole TO-220-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 079600-BD244C
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220
Maximum Current Collector: 6A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 1.5V @ 1A, 6A
Collector Cut-off Current(Max): 700μA
Typical Gain (hFE) (Min): 15 @ 3A, 4V
Maximum Power Dissipation: 65W
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
Quantity per package: 200
TRANS PNP 100V 6A TO220-3
| Rochester Electronics | DigiKey | Win Source Electronics | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | RF Transistors | Transistors | Transistors | Bipolar RF Transistors |
| Product Number | BD244C | BD244CFS-ND | 079600-BD244C | BD244C |
| Product Name | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - BD244C | Single Bipolar Transistors | |
| Polarity | PNP | PNP | PNP; PNP | PNP; PNP |
| Package Type | TO-220; TO-220AB | TO-220; TO-220-3 | TO-220; SOT3; TO-220 | TO-220; TO-220-3 |
| IC(max) | 6000 milliamps |
