onsemi Single Bipolar Transistors BD239BTU

Description
NPN Epitaxial Silicon Transistor
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Description
NPN Epitaxial Silicon Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - BD239BTU - Rochester Electronics
Newburyport, MA, United States
NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor

Supplier's Site Datasheet
Single Bipolar Transistors - BD239BTU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD239BTU-ND
Single Bipolar Transistors BD239BTU-ND
Bipolar (BJT) Transistor NPN 80V 2A 30W Through Hole TO-220-3

Bipolar (BJT) Transistor NPN 80V 2A 30W Through Hole TO-220-3

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1048984-BD239BTU - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1048984-BD239BTU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1048984-BD239BTU
Win Source Part Number: 1048984-BD239BTU Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 1 Power - Max: 30 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 2 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3 Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): LM395T; TIP29A; KSD526OTU; TIP112TU; TIP41C; ECCN: EAR99 Fake Threat In the Open Market: 57 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 0000.00.0000 Mfr: Fairchild Semiconductor Other Names: FAIFSCBD239BTU,2156- BD239BTU Base Product Number: BD239

Win Source Part Number: 1048984-BD239BTU
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Bulk
Standard Package: 1
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 2 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): LM395T; TIP29A; KSD526OTU; TIP112TU; TIP41C;
ECCN: EAR99
Fake Threat In the Open Market: 57 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 0000.00.0000
Mfr: Fairchild Semiconductor
Other Names: FAIFSCBD239BTU,2156-BD239BTU
Base Product Number: BD239

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD239BTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD239BTU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD239BTU
TRANS NPN 80V 2A TO220-3

TRANS NPN 80V 2A TO220-3

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BD239BTU BD239BTU-ND 1048984-BD239BTU BD239BTU
Product Name Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN
Package Type TO-220; TO-220-3 TO-220; TO-220-3 TO-220; SOT3 TO-220; TO-220-3
Packing Method Tube; Tube Bulk; Bulk
IC(max) 2000 milliamps 2000 milliamps
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