PNP BJT Transistor, 80V, 1A, 30W, TO-225 Product overview: BD180G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 1A, 30W. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 1A, 30W, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BD180G can be used for catalog matching and distributor lookup.
PNP power transistor,BD180 3A
PNP power transistor,BD180 3A
PNP power transistor,BD180 3A
TRANS PNP 80V 1A TO126
Bipolar (BJT) Transistor PNP 80V 1A 3MHz 30W Through Hole TO-126
Manufacturer: ON Semiconductor
Win Source Part Number: 1152545-BD180G
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: -65°C ~ 150°C (TJ)
Package: TO-225AA, TO-126-3
Power - Max: 30W
Transistor Type: PNP
Frequency - Transition: 3MHz
Family Name: BD180
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
RoHS State: Request Verification
Manufacturer Package: TO-225AA
Current - Collector (Ic) (Maximum): 1A
Voltage - Collector Emitter Breakdown (Maximum): 80V
Vce Saturation (Maximum) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Maximum): 1mA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 40 @ 150mA, 2V
Alternative Parts (Cross-Reference): 2SB548R; 2SB548S; 2SB548Q;
Introduction Date: August 31, 1995
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2023
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
TRANS PNP 80V 1A TO126
BIPOLAR TRANSISTOR, PNP, -80V, TO-225; Transistor Polarity:PNP; Collector Emitter Voltage Max:80V; Continuous Collector Current:3A; Power Dissipation:30W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:3MHzRoHS Compliant: Yes
Bipolar (BJT) Single Transistor, GENERAL PURPOSE, PNP, -80 V, 3 MHz, 30 W, 3 A, 40 RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 276-BD180G | 5450062P | 5450062 | BD180G | BD180GOS-ND | 1152545-BD180G | BD180G | 26K3497 | 37K9432 |
| Product Name | 80V 1A 30W Bipolar Transistor | Bipolar Transistors | Bipolar Transistors | Single Bipolar Transistors | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - BD180G | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistor, Pnp, -80V, To-225; Transistor Polarity Onsemi | Bipolar (Bjt) Single Transistor, General Purpose, Pnp, -80 V, 3 Mhz, 30 W, 3 A, 40 Rohs Compliant Onsemi |
| Polarity | PNP | PNP | PNP | PNP; PNP | PNP | PNP | PNP | PNP | |
| IC(max) | 1000 milliamps | 1000 milliamps | 1000 milliamps | 3000 milliamps | |||||
| VCEO | 80 volts | 80 volts | 80 volts | 80 volts | |||||
| VCBO | 80 volts | ||||||||
| fT | 3 MHz |
