onsemi TRANSISTORS - Transistors (BJT) - Single - BD179G BD179G

Manufacturer: ON Semiconductor
Win Source Part Number: 200959-BD179G
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 3MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-225AA
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 800mV @ 100mA, 1A
Collector Cut-off Current(Max): 100μA (ICBO)
Typical Gain (hFE) (Min): 63 @ 150mA, 2V
Maximum Power Dissipation: 30W
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited

80V 3A NPN BJT TO-225 Power Transistor Product overview: BD179G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 3A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 3A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BD179G can be used for catalog matching and distributor lookup.

Bipolar (BJT) Transistor NPN 80V 3A 3MHz 30W Through Hole TO-126