Bipolar (BJT) Transistor NPN 80V 3A 3MHz 30W Through Hole TO-126
Manufacturer: ON Semiconductor
Win Source Part Number: 200959-BD179G
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 3MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-225AA
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 800mV @ 100mA, 1A
Collector Cut-off Current(Max): 100μA (ICBO)
Typical Gain (hFE) (Min): 63 @ 150mA, 2V
Maximum Power Dissipation: 30W
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
TRANS NPN 80V 3A TO126
| DigiKey | Win Source Electronics | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Transistors | Transistors | Bipolar RF Transistors |
| Product Number | BD179GOS-ND | 200959-BD179G | 598-BD179G | BD179G |
| Product Name | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - BD179G | TRANS NPN 80V 3A TO-225 | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN; NPN | NPN; NPN | |
| Package Type | TO-225AA, TO-126-3 | SOT3; TO-225AA | ||
| Transistor Technology / Material | SILICON |